Presentation 2006-05-19
Tunneling current oscillations in Si/SiO_2/Si structures
Daniel MORARU, Daisuki NAGATA, Seiji HORIGUCHI, Ratno NURYADI, Hiroya IKEDA, Michiharu TABE,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) Current oscillations in the Fowler-Nordheim tunneling regime are investigated for Si/SiO_2/Si structures obtained by a wafer bonding technique. These oscillations arise from the interference in the conduction band of SiO_2 of electron waves after reflection at the SiO_2/Si collecting interface. The temperature dependence of the amplitude of these oscillations gives an insight on the behavior of scattering mechanisms in the amorphous thermally grown SiO_2. This fact has been confirmed by the results obtained for metal-oxide-semiconductor reference structures.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Fowler-Nordheim Current Oscillations (FNCOs) / Fowler-Nordheim Tunneling (FNT) / Scattering
Paper # ED2006-40,CPM2006-27,SDM2006-40
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Conference Information
Committee CPM
Conference Date 2006/5/11(1days)
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Registration To Component Parts and Materials (CPM)
Language ENG
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Tunneling current oscillations in Si/SiO_2/Si structures
Sub Title (in English)
Keyword(1) Fowler-Nordheim Current Oscillations (FNCOs)
Keyword(2) Fowler-Nordheim Tunneling (FNT)
Keyword(3) Scattering
1st Author's Name Daniel MORARU
1st Author's Affiliation Research Institute of Electronics, Shizuoka University()
2nd Author's Name Daisuki NAGATA
2nd Author's Affiliation Research Institute of Electronics, Shizuoka University
3rd Author's Name Seiji HORIGUCHI
3rd Author's Affiliation Department of Electrical and Electronic Engineering, Akita University
4th Author's Name Ratno NURYADI
4th Author's Affiliation Research Institute of Electronics, Shizuoka University
5th Author's Name Hiroya IKEDA
5th Author's Affiliation Research Institute of Electronics, Shizuoka University
6th Author's Name Michiharu TABE
6th Author's Affiliation Research Institute of Electronics, Shizuoka University
Date 2006-05-19
Paper # ED2006-40,CPM2006-27,SDM2006-40
Volume (vol) vol.106
Number (no) 46
Page pp.pp.-
#Pages 5
Date of Issue