Presentation 2006-05-19
Light irradiation effect on single-hole-tunneling current of an SOI-FET
Zainal A. BURHANUDIN, Ratno NURYADI, Michiharu TABE,
PDF Download Page PDF download Page Link
Abstract(in Japanese) (See Japanese page)
Abstract(in English) A single-photon detector based on Si multidots single-hole-tunneling (SHT) SOI-FET has been demonstrated by our group. The detector, however, only detects photons absorb in the Si dots on the top of the SOI layer resulting in a rather low quantum efficiency (QE). Our attempt to improve the QE by introducing additional photon absorption layer using a p/p^+-Si as the SOI substrate is reported. It will be shown that the absorption of photons in the depleted p-Si layer of the substrate lead to an increase in the effective back gate bias, which in return modulated the SHT current that is flowing in the top-Si channel. The result demonstrates the functionality of the device, and thus opens up the possibility of realizing a high QE single-photon detector based on SHT SOI-FET.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Single hole tunneling / Photon detector / p/p^+-Si substrate
Paper # ED2006-39,CPM2006-26,SDM2006-39
Date of Issue

Conference Information
Committee CPM
Conference Date 2006/5/11(1days)
Place (in Japanese) (See Japanese page)
Place (in English)
Topics (in Japanese) (See Japanese page)
Topics (in English)
Chair
Vice Chair
Secretary
Assistant

Paper Information
Registration To Component Parts and Materials (CPM)
Language ENG
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Light irradiation effect on single-hole-tunneling current of an SOI-FET
Sub Title (in English)
Keyword(1) Single hole tunneling
Keyword(2) Photon detector
Keyword(3) p/p^+-Si substrate
1st Author's Name Zainal A. BURHANUDIN
1st Author's Affiliation Research Institue of Electronics, Shizuoka University()
2nd Author's Name Ratno NURYADI
2nd Author's Affiliation Research Institue of Electronics, Shizuoka University
3rd Author's Name Michiharu TABE
3rd Author's Affiliation Research Institue of Electronics, Shizuoka University
Date 2006-05-19
Paper # ED2006-39,CPM2006-26,SDM2006-39
Volume (vol) vol.106
Number (no) 46
Page pp.pp.-
#Pages 5
Date of Issue