Presentation | 2006-05-19 Light irradiation effect on single-hole-tunneling current of an SOI-FET Zainal A. BURHANUDIN, Ratno NURYADI, Michiharu TABE, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | A single-photon detector based on Si multidots single-hole-tunneling (SHT) SOI-FET has been demonstrated by our group. The detector, however, only detects photons absorb in the Si dots on the top of the SOI layer resulting in a rather low quantum efficiency (QE). Our attempt to improve the QE by introducing additional photon absorption layer using a p/p^+-Si as the SOI substrate is reported. It will be shown that the absorption of photons in the depleted p-Si layer of the substrate lead to an increase in the effective back gate bias, which in return modulated the SHT current that is flowing in the top-Si channel. The result demonstrates the functionality of the device, and thus opens up the possibility of realizing a high QE single-photon detector based on SHT SOI-FET. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Single hole tunneling / Photon detector / p/p^+-Si substrate |
Paper # | ED2006-39,CPM2006-26,SDM2006-39 |
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Conference Information | |
Committee | CPM |
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Conference Date | 2006/5/11(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Component Parts and Materials (CPM) |
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Language | ENG |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Light irradiation effect on single-hole-tunneling current of an SOI-FET |
Sub Title (in English) | |
Keyword(1) | Single hole tunneling |
Keyword(2) | Photon detector |
Keyword(3) | p/p^+-Si substrate |
1st Author's Name | Zainal A. BURHANUDIN |
1st Author's Affiliation | Research Institue of Electronics, Shizuoka University() |
2nd Author's Name | Ratno NURYADI |
2nd Author's Affiliation | Research Institue of Electronics, Shizuoka University |
3rd Author's Name | Michiharu TABE |
3rd Author's Affiliation | Research Institue of Electronics, Shizuoka University |
Date | 2006-05-19 |
Paper # | ED2006-39,CPM2006-26,SDM2006-39 |
Volume (vol) | vol.106 |
Number (no) | 46 |
Page | pp.pp.- |
#Pages | 5 |
Date of Issue |