| Presentation | 2006-05-19 Estimation of trap parameters from a slow component of excess carrier decay curves Masaya ICHIMURA, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | In the photoconductivity decay measurement, a slow component is often observed, especially for wide-bandgap materials, e.g., SiC and GaN. This slow component is thought to be due to minority carrier traps: excited minority carriers are captured by the traps, and excess majority carriers remain in the band. From temperature dependence of the slow component, it is in principle possible to estimate trap properties. However, the necessary analysis is not simple, because both capture and emission processes should be taken into account, in contrast to the transient capacitance measurement (such as deep level transient spectroscopy), where the pure emission process can be observed. In this paper, excess carrier decay curves are calculated for four typical cases, taking 4H-SiC as an example, and it is discussed how the trap properties can be deduced from the decay curves. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | carrier lifetime / carrier decay curve / temperature dependence / minority carrier trap |
| Paper # | ED2006-38,CPM2006-25,SDM2006-38 |
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| Conference Information | |
| Committee | CPM |
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| Conference Date | 2006/5/11(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Estimation of trap parameters from a slow component of excess carrier decay curves |
| Sub Title (in English) | |
| Keyword(1) | carrier lifetime |
| Keyword(2) | carrier decay curve |
| Keyword(3) | temperature dependence |
| Keyword(4) | minority carrier trap |
| 1st Author's Name | Masaya ICHIMURA |
| 1st Author's Affiliation | Department of Electrical and Electronic Engineering, Nagoya Institute of Technology() |
| Date | 2006-05-19 |
| Paper # | ED2006-38,CPM2006-25,SDM2006-38 |
| Volume (vol) | vol.106 |
| Number (no) | 46 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |