| Presentation | 2006-05-19 Electrical Characteristics of n-type diamond Schottky Diode and Metal/diamond Interfaces Mariko SUZUKI, Satoshi KOIZUMI, Masayuki KATAGIRI, Tomio ONO, Naoshi SAKUMA, Hiroaki YOSHIDA, Tadashi SAKAI, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Electrical characteristics of n-type diamond Schottky diodes and metal/diamond interfaces have been systematically investigated for phosphorus (P)-doped homoepitaxial diamond layers. The current voltage (I-V) characteristics of the Ni/n-type diamond Schottky diode show excellent rectification properties from 297K to 773K. The ideality factor and the rectification ratio were 1.0 and～10^6 at±10V at 573K, respectively. The rectifying properties deteriorated with increasing P concentration in the diamond layers. Temperature-dependent capacitance-frequency (C-f) and conductance-frequency (G-f) measurements on the Schottky diodes have shown that the capacitance is reduced at high frequency due to the inability of deep centers to maintain an equilibrium ionization state under a high-frequency modulation. C-V measurements deduced that the P electrical activity (the ratio of the net donor concentration to the P concentration) was nearly 1 from low concentration (1.6×10^<16>cm^<-3>) to high concentration (2.7×10^<18>cm^<-3>) of P. The Schottky barrier height was found to be almost constant at ～4.3eV independent of the metal work function (Ni, Pt, Al and Ti). |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | homoepitaxial diamond / n-type / phosphorus / Schottky diode |
| Paper # | ED2006-37,CPM2006-24,SDM2006-37 |
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| Conference Information | |
| Committee | CPM |
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| Conference Date | 2006/5/11(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Electrical Characteristics of n-type diamond Schottky Diode and Metal/diamond Interfaces |
| Sub Title (in English) | |
| Keyword(1) | homoepitaxial diamond |
| Keyword(2) | n-type |
| Keyword(3) | phosphorus |
| Keyword(4) | Schottky diode |
| 1st Author's Name | Mariko SUZUKI |
| 1st Author's Affiliation | Corporate R&D Center, Toshiba Corporation() |
| 2nd Author's Name | Satoshi KOIZUMI |
| 2nd Author's Affiliation | National Institute for Materials Science |
| 3rd Author's Name | Masayuki KATAGIRI |
| 3rd Author's Affiliation | Tsukuba University |
| 4th Author's Name | Tomio ONO |
| 4th Author's Affiliation | Corporate R&D Center, Toshiba Corporation |
| 5th Author's Name | Naoshi SAKUMA |
| 5th Author's Affiliation | Corporate R&D Center, Toshiba Corporation |
| 6th Author's Name | Hiroaki YOSHIDA |
| 6th Author's Affiliation | Corporate R&D Center, Toshiba Corporation |
| 7th Author's Name | Tadashi SAKAI |
| 7th Author's Affiliation | Corporate R&D Center, Toshiba Corporation |
| Date | 2006-05-19 |
| Paper # | ED2006-37,CPM2006-24,SDM2006-37 |
| Volume (vol) | vol.106 |
| Number (no) | 46 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |