Presentation | 2006-05-19 Leakage current control of AlGaN Schottky interfaces by surface control process using thin Al layer Junji Kotani, Masamitsu Kaneko, Tamotsu Hashizume, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | Leakage currents in AlGaN Schottky diodes were investigated systematically by using a rigorous computer simulation based on the thin surface barrier model taking account of unintentionally doped surface donors. The leakage currents in AlGaN Schottky diodes have stronger bias dependence and smaller temperature dependences as compared with those of GaN diodes. It was shown that these features were associated with shallow oxygen donors located near the AlGaN surface. Then, an attempt was made to remove oxygen and suppress leakage currents by a novel surface control process using a ultra-thin Al layer and subsequent annealing. A remarkable reduction of reverse leakage currents of 4~5 orders of magnitude took place in large area AlGaN Schottky diodes after application of the surface control process. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | AlGaN / Schottky contacts / leakage currents / oxygen donors / surface control / XPS |
Paper # | ED2006-36,CPM2006-23,SDM2006-36 |
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Conference Information | |
Committee | CPM |
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Conference Date | 2006/5/11(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Component Parts and Materials (CPM) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Leakage current control of AlGaN Schottky interfaces by surface control process using thin Al layer |
Sub Title (in English) | |
Keyword(1) | AlGaN |
Keyword(2) | Schottky contacts |
Keyword(3) | leakage currents |
Keyword(4) | oxygen donors |
Keyword(5) | surface control |
Keyword(6) | XPS |
1st Author's Name | Junji Kotani |
1st Author's Affiliation | Research Center for Integrated Quantum Electronics, Hokkaido University() |
2nd Author's Name | Masamitsu Kaneko |
2nd Author's Affiliation | Research Center for Integrated Quantum Electronics, Hokkaido University |
3rd Author's Name | Tamotsu Hashizume |
3rd Author's Affiliation | Research Center for Integrated Quantum Electronics, Hokkaido University |
Date | 2006-05-19 |
Paper # | ED2006-36,CPM2006-23,SDM2006-36 |
Volume (vol) | vol.106 |
Number (no) | 46 |
Page | pp.pp.- |
#Pages | 4 |
Date of Issue |