Presentation 2006-05-19
Leakage current control of AlGaN Schottky interfaces by surface control process using thin Al layer
Junji Kotani, Masamitsu Kaneko, Tamotsu Hashizume,
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Abstract(in English) Leakage currents in AlGaN Schottky diodes were investigated systematically by using a rigorous computer simulation based on the thin surface barrier model taking account of unintentionally doped surface donors. The leakage currents in AlGaN Schottky diodes have stronger bias dependence and smaller temperature dependences as compared with those of GaN diodes. It was shown that these features were associated with shallow oxygen donors located near the AlGaN surface. Then, an attempt was made to remove oxygen and suppress leakage currents by a novel surface control process using a ultra-thin Al layer and subsequent annealing. A remarkable reduction of reverse leakage currents of 4~5 orders of magnitude took place in large area AlGaN Schottky diodes after application of the surface control process.
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Keyword(in English) AlGaN / Schottky contacts / leakage currents / oxygen donors / surface control / XPS
Paper # ED2006-36,CPM2006-23,SDM2006-36
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Committee CPM
Conference Date 2006/5/11(1days)
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Registration To Component Parts and Materials (CPM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Leakage current control of AlGaN Schottky interfaces by surface control process using thin Al layer
Sub Title (in English)
Keyword(1) AlGaN
Keyword(2) Schottky contacts
Keyword(3) leakage currents
Keyword(4) oxygen donors
Keyword(5) surface control
Keyword(6) XPS
1st Author's Name Junji Kotani
1st Author's Affiliation Research Center for Integrated Quantum Electronics, Hokkaido University()
2nd Author's Name Masamitsu Kaneko
2nd Author's Affiliation Research Center for Integrated Quantum Electronics, Hokkaido University
3rd Author's Name Tamotsu Hashizume
3rd Author's Affiliation Research Center for Integrated Quantum Electronics, Hokkaido University
Date 2006-05-19
Paper # ED2006-36,CPM2006-23,SDM2006-36
Volume (vol) vol.106
Number (no) 46
Page pp.pp.-
#Pages 4
Date of Issue