| Presentation | 2006-05-19 Fabrication of patterned GaInAs/GaAs hetero-structure using amorphous arsenic mask Yosuke NORITAKE, Takumi YAMADA, Masao TABUCHI, Yoshikazu TAKEDA, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | To form patterned GaInAs/GaAs hetero-structures, we propose a new formation process using amorphous As as a mask. The process consists of five stages. 1) GaAs layer is grown on GaAs substrate at a lower temperature about 480℃. The low-temperature-grown layer enhances In diffusion on the 5th stage. 2) Amorphous As layer is deposited on the GaAs layer as a mask layer. 3) Designed patterns are drawn on the amorphous As mask using electron beam (EB) lithography. 4) Metallic In is deposited on the patterned amorphous As mask. 5) The sample is annealed for two purposes: one is to re-evaporate the amorphous As mask with metallic In on it and the other is to diffuse In into the GaAs layer. Then, the patterned GaInAs/GaAs hetero-structures are fabricated. In the process, the advantage to use the amorphous As mask is two-fold, i.e., the mask is easily deposited in normal MBE chamber and is removed by only heating it at an appropriate temperature (300～350℃), all in situ. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | amorphous arsenic / UHV process / hetero-structure / molecular beam epitaxy / GaInAs/GaAs |
| Paper # | ED2006-35,CPM2006-22,SDM2006-35 |
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| Conference Information | |
| Committee | CPM |
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| Conference Date | 2006/5/11(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Fabrication of patterned GaInAs/GaAs hetero-structure using amorphous arsenic mask |
| Sub Title (in English) | |
| Keyword(1) | amorphous arsenic |
| Keyword(2) | UHV process |
| Keyword(3) | hetero-structure |
| Keyword(4) | molecular beam epitaxy |
| Keyword(5) | GaInAs/GaAs |
| 1st Author's Name | Yosuke NORITAKE |
| 1st Author's Affiliation | Graduate School of Engineering, Nagoya University() |
| 2nd Author's Name | Takumi YAMADA |
| 2nd Author's Affiliation | Graduate School of Engineering, Nagoya University |
| 3rd Author's Name | Masao TABUCHI |
| 3rd Author's Affiliation | Venture Business Laboratory, Nagoya University |
| 4th Author's Name | Yoshikazu TAKEDA |
| 4th Author's Affiliation | Graduate School of Engineering, Nagoya University:Venture Business Laboratory, Nagoya University |
| Date | 2006-05-19 |
| Paper # | ED2006-35,CPM2006-22,SDM2006-35 |
| Volume (vol) | vol.106 |
| Number (no) | 46 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |