Presentation 2006-05-19
Performance improvement of spin-polarized electron source based on high quality GaAs/GaAsP strain superlattice structure
Toru Ujihara, Bo Chen, Kenichi Yasui, Ryosuke Sakai, Masahiro Yamamoto, Tsutomu Nakanishi, Yoshikazu Takeda,
PDF Download Page PDF download Page Link
Abstract(in Japanese) (See Japanese page)
Abstract(in English) In the previous study, we had successfully fabricated the GaAs/GaAsP superlattice spin-polarized electron source with the highest polarization of 92% in the world. However, the quantum efficiency was only 0.5%. In this study, we tried to increase the quantum efficiency by the improvement of crystal quality. First, use of a composition-graded buffer structure decreased defect density due to lattice misfit. Next, using a strain compensated structure, the crystal quality and the periodicity of the superlattice were improved. As a result, the quantum efficiency remarkably increased to 5.2%. However, the strain compensated structure unfortunately degraded the polarization. Finally, the increase of the layer thickness recovered the polarization.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Quantum efficiency / Miniband structure / Strain compensated structure / Graded buffer structure / MOCVD
Paper # ED2006-34,CPM2006-21,SDM2006-34
Date of Issue

Conference Information
Committee CPM
Conference Date 2006/5/11(1days)
Place (in Japanese) (See Japanese page)
Place (in English)
Topics (in Japanese) (See Japanese page)
Topics (in English)
Chair
Vice Chair
Secretary
Assistant

Paper Information
Registration To Component Parts and Materials (CPM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Performance improvement of spin-polarized electron source based on high quality GaAs/GaAsP strain superlattice structure
Sub Title (in English)
Keyword(1) Quantum efficiency
Keyword(2) Miniband structure
Keyword(3) Strain compensated structure
Keyword(4) Graded buffer structure
Keyword(5) MOCVD
1st Author's Name Toru Ujihara
1st Author's Affiliation Graduate School of Engineering, Nagoya University()
2nd Author's Name Bo Chen
2nd Author's Affiliation Graduate School of Engineering, Nagoya University
3rd Author's Name Kenichi Yasui
3rd Author's Affiliation Graduate School of Science, Nagoya University
4th Author's Name Ryosuke Sakai
4th Author's Affiliation Graduate School of Science, Nagoya University
5th Author's Name Masahiro Yamamoto
5th Author's Affiliation Graduate School of Science, Nagoya University
6th Author's Name Tsutomu Nakanishi
6th Author's Affiliation Graduate School of Science, Nagoya University
7th Author's Name Yoshikazu Takeda
7th Author's Affiliation Graduate School of Engineering, Nagoya University
Date 2006-05-19
Paper # ED2006-34,CPM2006-21,SDM2006-34
Volume (vol) vol.106
Number (no) 46
Page pp.pp.-
#Pages 6
Date of Issue