| Presentation | 2006-05-19 Fabrication of MOSFETs and LEDs for Si/III-V-N optoelectronic integrated circuits Naruto OHTA, Yuji MORISAKI, Soo-Young MOON, Seigi ISHIJI, Yuzo FURUKAWA, Hiroo YONEZU, Akihiro WAKAHARA, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We fabricated pMOSFETs and LEDs using lattice-matched n-Si/III-V-N layers/p-Si-substrate structures for monistic optoelectronic integrated circuits (OEICs). The n-Si/III-V-N layers/p-Si-substrate structures were grown by molecular beam epitaxy and the fabrication processes were carried out together with MOSFET and LED processes. The III-V-N layers in the LEDs and ion-implanted layer at source and drain were annealed to improve luminescence properties and activate the carriers, respectively, with temperature-increasing at fabrication of the gate-oxide layer at the same time. The threshold voltage of the pMOSFET and the mobility were -3.1V and 58cm^2/V・s, respectively. The built-in-potential of the LED was 3.8V and the electroluminescence spectra with peak wavelength of 690nm were measured. In this report, we succeeded in development of elemental devices for OEICs. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | OEIC / Optoelectronic integrated circuits / Optical interconnection / III-V-N alloys / InGaPN / GaPN |
| Paper # | ED2006-33,CPM2006-20,SDM2006-33 |
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| Conference Information | |
| Committee | CPM |
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| Conference Date | 2006/5/11(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Fabrication of MOSFETs and LEDs for Si/III-V-N optoelectronic integrated circuits |
| Sub Title (in English) | |
| Keyword(1) | OEIC |
| Keyword(2) | Optoelectronic integrated circuits |
| Keyword(3) | Optical interconnection |
| Keyword(4) | III-V-N alloys |
| Keyword(5) | InGaPN |
| Keyword(6) | GaPN |
| 1st Author's Name | Naruto OHTA |
| 1st Author's Affiliation | Toyohashi University of Technology() |
| 2nd Author's Name | Yuji MORISAKI |
| 2nd Author's Affiliation | Toyohashi University of Technology |
| 3rd Author's Name | Soo-Young MOON |
| 3rd Author's Affiliation | Toyohashi University of Technology |
| 4th Author's Name | Seigi ISHIJI |
| 4th Author's Affiliation | Toyohashi University of Technology |
| 5th Author's Name | Yuzo FURUKAWA |
| 5th Author's Affiliation | Toyohashi University of Technology |
| 6th Author's Name | Hiroo YONEZU |
| 6th Author's Affiliation | Toyohashi University of Technology |
| 7th Author's Name | Akihiro WAKAHARA |
| 7th Author's Affiliation | Toyohashi University of Technology |
| Date | 2006-05-19 |
| Paper # | ED2006-33,CPM2006-20,SDM2006-33 |
| Volume (vol) | vol.106 |
| Number (no) | 46 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |