| Presentation | 2006-05-19 InGaPN/GaPN Quantum Well Structures for Si/III-V-N Optoelectronic Integrated Circuits Kazuyuki UMENO, Sung Man KIM, Yuzo FURUKAWA, Hiroo YONEZU, Akihiro WAKAHARA, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Direct-transition InGaPN/GaPN quntum well (QW) structures were grown on GaP substrates by RF-MBE at 500℃ for application of light emitting devices in monolithic optoelectronic integrated circuits (OEICs) on Si substrates. The bandgap of InGaPN alloys was calculated by the Band Anti-Crossing (BAG) model. The band alignments of the InGaPN/GaPN strained QW structures were estimated. As a result, the valence band offsets of the InGaPN/GaPN QWs with N concentration of 1～2% were 200～300meV, while conduction band offsets were very small. It was shown that an InGaPN quantum well layer needed an N content more than ～4% to obtain the conduction band offset above 300meV. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Si / OEIC / InGaPN / GaPN / GaAsPN / III-V-N / dilute nitride / Optical interconnection |
| Paper # | ED2006-32,CPM2006-19,SDM2006-32 |
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| Conference Information | |
| Committee | CPM |
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| Conference Date | 2006/5/11(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Vice Chair | |
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| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | InGaPN/GaPN Quantum Well Structures for Si/III-V-N Optoelectronic Integrated Circuits |
| Sub Title (in English) | |
| Keyword(1) | Si |
| Keyword(2) | OEIC |
| Keyword(3) | InGaPN |
| Keyword(4) | GaPN |
| Keyword(5) | GaAsPN |
| Keyword(6) | III-V-N |
| Keyword(7) | dilute nitride |
| Keyword(8) | Optical interconnection |
| 1st Author's Name | Kazuyuki UMENO |
| 1st Author's Affiliation | Toyohashi University of Technology() |
| 2nd Author's Name | Sung Man KIM |
| 2nd Author's Affiliation | Toyohashi University of Technology |
| 3rd Author's Name | Yuzo FURUKAWA |
| 3rd Author's Affiliation | Toyohashi University of Technology |
| 4th Author's Name | Hiroo YONEZU |
| 4th Author's Affiliation | Toyohashi University of Technology |
| 5th Author's Name | Akihiro WAKAHARA |
| 5th Author's Affiliation | Toyohashi University of Technology |
| Date | 2006-05-19 |
| Paper # | ED2006-32,CPM2006-19,SDM2006-32 |
| Volume (vol) | vol.106 |
| Number (no) | 46 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |