Presentation 2006-05-19
Electrical Properties of GaPN
Akihiro WAKAHARA, Yuzo FURUKAWA, Atsushi SATO, Eri SHIMADA, Daisuke MINOHARA, Hiroo YONEZU,
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Abstract(in English) In order to realize an optoelectronic integrated circuits, composed of Si-LSIs and optical devices, realization of dislocation free structure by means of III-V-N lattice matched to Si, conductivity control, and reduction of point defects are necessary, n-type and p-type GaPN could be obtained by using S and Mg doping, respectively. Temperature dependence of Hall mobility revealed that ionized impurity scattering was dominant in n-type GaPN even at room temperature, while phonon scattering was dominant at high temperature in p-type GaPN. Time dependent photoconductivity measurement showed long decay time suggesting presence of deep levels.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) GaPN / impurity doping / MBE / electrical properties / carrier scattering mechanism
Paper # ED2006-31,CPM2006-18,SDM2006-31
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Conference Information
Committee CPM
Conference Date 2006/5/11(1days)
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Registration To Component Parts and Materials (CPM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Electrical Properties of GaPN
Sub Title (in English)
Keyword(1) GaPN
Keyword(2) impurity doping
Keyword(3) MBE
Keyword(4) electrical properties
Keyword(5) carrier scattering mechanism
1st Author's Name Akihiro WAKAHARA
1st Author's Affiliation Faculty of Engineering, Toyohashi University of Technology()
2nd Author's Name Yuzo FURUKAWA
2nd Author's Affiliation Faculty of Engineering, Toyohashi University of Technology
3rd Author's Name Atsushi SATO
3rd Author's Affiliation Faculty of Engineering, Toyohashi University of Technology
4th Author's Name Eri SHIMADA
4th Author's Affiliation Faculty of Engineering, Toyohashi University of Technology
5th Author's Name Daisuke MINOHARA
5th Author's Affiliation Faculty of Engineering, Toyohashi University of Technology
6th Author's Name Hiroo YONEZU
6th Author's Affiliation Faculty of Engineering, Toyohashi University of Technology
Date 2006-05-19
Paper # ED2006-31,CPM2006-18,SDM2006-31
Volume (vol) vol.106
Number (no) 46
Page pp.pp.-
#Pages 5
Date of Issue