Presentation | 2006-05-19 Electrical Properties of GaPN Akihiro WAKAHARA, Yuzo FURUKAWA, Atsushi SATO, Eri SHIMADA, Daisuke MINOHARA, Hiroo YONEZU, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | In order to realize an optoelectronic integrated circuits, composed of Si-LSIs and optical devices, realization of dislocation free structure by means of III-V-N lattice matched to Si, conductivity control, and reduction of point defects are necessary, n-type and p-type GaPN could be obtained by using S and Mg doping, respectively. Temperature dependence of Hall mobility revealed that ionized impurity scattering was dominant in n-type GaPN even at room temperature, while phonon scattering was dominant at high temperature in p-type GaPN. Time dependent photoconductivity measurement showed long decay time suggesting presence of deep levels. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | GaPN / impurity doping / MBE / electrical properties / carrier scattering mechanism |
Paper # | ED2006-31,CPM2006-18,SDM2006-31 |
Date of Issue |
Conference Information | |
Committee | CPM |
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Conference Date | 2006/5/11(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | |
Topics (in Japanese) | (See Japanese page) |
Topics (in English) | |
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Paper Information | |
Registration To | Component Parts and Materials (CPM) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Electrical Properties of GaPN |
Sub Title (in English) | |
Keyword(1) | GaPN |
Keyword(2) | impurity doping |
Keyword(3) | MBE |
Keyword(4) | electrical properties |
Keyword(5) | carrier scattering mechanism |
1st Author's Name | Akihiro WAKAHARA |
1st Author's Affiliation | Faculty of Engineering, Toyohashi University of Technology() |
2nd Author's Name | Yuzo FURUKAWA |
2nd Author's Affiliation | Faculty of Engineering, Toyohashi University of Technology |
3rd Author's Name | Atsushi SATO |
3rd Author's Affiliation | Faculty of Engineering, Toyohashi University of Technology |
4th Author's Name | Eri SHIMADA |
4th Author's Affiliation | Faculty of Engineering, Toyohashi University of Technology |
5th Author's Name | Daisuke MINOHARA |
5th Author's Affiliation | Faculty of Engineering, Toyohashi University of Technology |
6th Author's Name | Hiroo YONEZU |
6th Author's Affiliation | Faculty of Engineering, Toyohashi University of Technology |
Date | 2006-05-19 |
Paper # | ED2006-31,CPM2006-18,SDM2006-31 |
Volume (vol) | vol.106 |
Number (no) | 46 |
Page | pp.pp.- |
#Pages | 5 |
Date of Issue |