| Presentation | 2006-05-19 Electrical Properties of GaPN Akihiro WAKAHARA, Yuzo FURUKAWA, Atsushi SATO, Eri SHIMADA, Daisuke MINOHARA, Hiroo YONEZU, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | In order to realize an optoelectronic integrated circuits, composed of Si-LSIs and optical devices, realization of dislocation free structure by means of III-V-N lattice matched to Si, conductivity control, and reduction of point defects are necessary, n-type and p-type GaPN could be obtained by using S and Mg doping, respectively. Temperature dependence of Hall mobility revealed that ionized impurity scattering was dominant in n-type GaPN even at room temperature, while phonon scattering was dominant at high temperature in p-type GaPN. Time dependent photoconductivity measurement showed long decay time suggesting presence of deep levels. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaPN / impurity doping / MBE / electrical properties / carrier scattering mechanism |
| Paper # | ED2006-31,CPM2006-18,SDM2006-31 |
| Date of Issue |
| Conference Information | |
| Committee | CPM |
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| Conference Date | 2006/5/11(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Electrical Properties of GaPN |
| Sub Title (in English) | |
| Keyword(1) | GaPN |
| Keyword(2) | impurity doping |
| Keyword(3) | MBE |
| Keyword(4) | electrical properties |
| Keyword(5) | carrier scattering mechanism |
| 1st Author's Name | Akihiro WAKAHARA |
| 1st Author's Affiliation | Faculty of Engineering, Toyohashi University of Technology() |
| 2nd Author's Name | Yuzo FURUKAWA |
| 2nd Author's Affiliation | Faculty of Engineering, Toyohashi University of Technology |
| 3rd Author's Name | Atsushi SATO |
| 3rd Author's Affiliation | Faculty of Engineering, Toyohashi University of Technology |
| 4th Author's Name | Eri SHIMADA |
| 4th Author's Affiliation | Faculty of Engineering, Toyohashi University of Technology |
| 5th Author's Name | Daisuke MINOHARA |
| 5th Author's Affiliation | Faculty of Engineering, Toyohashi University of Technology |
| 6th Author's Name | Hiroo YONEZU |
| 6th Author's Affiliation | Faculty of Engineering, Toyohashi University of Technology |
| Date | 2006-05-19 |
| Paper # | ED2006-31,CPM2006-18,SDM2006-31 |
| Volume (vol) | vol.106 |
| Number (no) | 46 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |