| Presentation | 2006-05-18 RPE-MOCVD-growth of Zn_<1-x>CdxO film for visible emission region Toshiya OHASHI, Junji ISHIHARA, Atsushi NAKAMURA, Toru AOKI, Jiro TEMMYO, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | ZnO is wide-gap semiconductor. The optical bandgap of ZnO films is 3.3eV and crystal structure is wurzite-type. Because exitonic binding energy of ZnO is 60meV, an efficient exciton emission from ZnO at room temperature is expected. On the other hand, CdO has rock-salt-type structure. Cd^<2+>(0.74Å) and Zn^<2+>(0.60Å) have near radii. So, ternary alloy can be realization. Zn_<1-x>Cd_xO films was grown by RPE-MOCVD. Growth temperature were changed from 250 to 450℃, RF power were changed from 0 to 90W. The content ratio of Zn_<1-x>Cd_xO films was controlled by changing the molar ratio of DEZn to DMCd. The optical characteristic and physical constant of Zn_<1-x>Cd_xO films were investigated. The optical bandgap of Zn_<1-x>Cd_xO films keeping wurzite-type was controlled between 3.3eV and 1.8eV at room temperature. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | remote plasma-enhanced MOCVD / ZnO / Zn_<1-x>CdxO / growth temperature / DMCd/(DEZn+DMCd) / RF power |
| Paper # | ED2006-24,CPM2006-11,SDM2006-24 |
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| Conference Information | |
| Committee | CPM |
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| Conference Date | 2006/5/11(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | RPE-MOCVD-growth of Zn_<1-x>CdxO film for visible emission region |
| Sub Title (in English) | |
| Keyword(1) | remote plasma-enhanced MOCVD |
| Keyword(2) | ZnO |
| Keyword(3) | Zn_<1-x>CdxO |
| Keyword(4) | growth temperature |
| Keyword(5) | DMCd/(DEZn+DMCd) |
| Keyword(6) | RF power |
| 1st Author's Name | Toshiya OHASHI |
| 1st Author's Affiliation | Research Institute of Electronics, Shizuoka University() |
| 2nd Author's Name | Junji ISHIHARA |
| 2nd Author's Affiliation | Research Institute of Electronics, Shizuoka University |
| 3rd Author's Name | Atsushi NAKAMURA |
| 3rd Author's Affiliation | Research Institute of Electronics, Shizuoka University |
| 4th Author's Name | Toru AOKI |
| 4th Author's Affiliation | Research Institute of Electronics, Shizuoka University |
| 5th Author's Name | Jiro TEMMYO |
| 5th Author's Affiliation | Research Institute of Electronics, Shizuoka University |
| Date | 2006-05-18 |
| Paper # | ED2006-24,CPM2006-11,SDM2006-24 |
| Volume (vol) | vol.106 |
| Number (no) | 46 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |