| Presentation | 2006-05-18 Fabrication of epitaxial γ-Al_2O_3 thin-films on Si substrates and its device application Takayuki OKADA, Mikinori ITO, Kazuaki SAWADA, Makoto ISHIDA, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We have focused on epitaxial γ-Al_2O_3 thin films grown on Si substrates, which can be integrated into Si-ULSI as a novel crystalline film. A 2-step growth method consists of the first Al_2O_3 solid phase epitaxy (SPE) process and the second Al-N_2O MBE growth process for formation of γ-Al_2O_3 films with very smooth surfaces has been established. And its various device applications have been reported. In this report, we report on a new epitaxial γ-Al_2O_3 deposition method without the SPE process. Because of its simplicity, this method is useful for adapting crystalline γ-Al_2O_3 films into Si ultra-large-scale integrated circuit applications |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Epitaxial γ-Al_2O_3 / Molecular Beam Epitaxy / Chemical Oxide |
| Paper # | ED2006-23,CPM2006-10,SDM2006-23 |
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| Conference Information | |
| Committee | CPM |
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| Conference Date | 2006/5/11(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Fabrication of epitaxial γ-Al_2O_3 thin-films on Si substrates and its device application |
| Sub Title (in English) | |
| Keyword(1) | Epitaxial γ-Al_2O_3 |
| Keyword(2) | Molecular Beam Epitaxy |
| Keyword(3) | Chemical Oxide |
| 1st Author's Name | Takayuki OKADA |
| 1st Author's Affiliation | Electrical & Electronic Engineering, Toyohashi University of Technology() |
| 2nd Author's Name | Mikinori ITO |
| 2nd Author's Affiliation | Electrical & Electronic Engineering, Toyohashi University of Technology |
| 3rd Author's Name | Kazuaki SAWADA |
| 3rd Author's Affiliation | Electrical & Electronic Engineering, Toyohashi University of Technology:Toyohashi University of Technology ISSRC:JST-CREST |
| 4th Author's Name | Makoto ISHIDA |
| 4th Author's Affiliation | Electrical & Electronic Engineering, Toyohashi University of Technology:Toyohashi University of Technology ISSRC:JST-CREST |
| Date | 2006-05-18 |
| Paper # | ED2006-23,CPM2006-10,SDM2006-23 |
| Volume (vol) | vol.106 |
| Number (no) | 46 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |