Presentation 2006-03-07
A Technique to Improve Linearity Deteriorated by Mobility Degradation for an MOS Transconductor
Teruoki KITAJIMA, Akira YACHIDATE, Fujihiko MATSUMOTO, Yasuaki NOGUCHI,
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Abstract(in English) Using a square-law function, a conventional MOS transconductor has been regarded as a linear circuit. In practice, however, the characteristic is not linear because of mobility degradation from an effect of vertical field. This paper presents a technique to improve the linearity of the transconductor. Considering the mobility degradation, the output current and the transconductance can not be expressed as simple equations. Thus, it has been difficult to find analytic solution for the linearization. In this paper, a derivation method emplying approximation is presented.
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Keyword(in English) analog integrated circuits / linear circuits / transconductor / MOS transistors
Paper # CAS2005-128,SIP2005-174,CS2005-121
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Committee CAS
Conference Date 2006/2/28(1days)
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Registration To Circuits and Systems (CAS)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) A Technique to Improve Linearity Deteriorated by Mobility Degradation for an MOS Transconductor
Sub Title (in English)
Keyword(1) analog integrated circuits
Keyword(2) linear circuits
Keyword(3) transconductor
Keyword(4) MOS transistors
1st Author's Name Teruoki KITAJIMA
1st Author's Affiliation Dept. Applied Physics, National Defense Academy()
2nd Author's Name Akira YACHIDATE
2nd Author's Affiliation Dept. Applied Physics, National Defense Academy
3rd Author's Name Fujihiko MATSUMOTO
3rd Author's Affiliation Dept. Applied Physics, National Defense Academy
4th Author's Name Yasuaki NOGUCHI
4th Author's Affiliation Dept. Applied Physics, National Defense Academy
Date 2006-03-07
Paper # CAS2005-128,SIP2005-174,CS2005-121
Volume (vol) vol.105
Number (no) 634
Page pp.pp.-
#Pages 6
Date of Issue