Presentation | 2006/4/10 Fabrication of β-FeSi_2/Si Hetero-junction and its Rectification Tsuyoshi YOSHITAKE, Shaban Abdel-Rady Ahmed MOHAMED, Kazuhiro NAKAJIMA, Wararu YOKOYAMA, Kunihito NAGAYAMA, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | Semiconducting β-FeSi_2 thin films were epitaxially as-grown on Si (111) substrates at a substrate temperature of 600℃, which is at least 200℃ lower than ordinary annealing temperatures, by using the facing targets direct-current sputtering (FTDCS) method using an FeSi_2 target without annealing. The deposited film exhibits a smooth surface with a surface roughness root mean square of 1.47nm. The direct and indirect optical band gaps estimated from the experiment were in agreement with those of the single crystalline bulk. Temperature dependence of the electrical conductivity implied Co incorporation from the FeSi_2 targets with a purity of 3 N. The n-β-FeSi_2/p-Si hetero-junction showed a large reverse leakage current. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | β-FeSi_2 / iron disilicide / epitaxial growth / pnjunction |
Paper # | ED2006-17,SDM2006-17,OME2006-17 |
Date of Issue |
Conference Information | |
Committee | OME |
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Conference Date | 2006/4/10(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | |
Topics (in Japanese) | (See Japanese page) |
Topics (in English) | |
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Vice Chair | |
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Paper Information | |
Registration To | Organic Material Electronics (OME) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Fabrication of β-FeSi_2/Si Hetero-junction and its Rectification |
Sub Title (in English) | |
Keyword(1) | β-FeSi_2 |
Keyword(2) | iron disilicide |
Keyword(3) | epitaxial growth |
Keyword(4) | pnjunction |
1st Author's Name | Tsuyoshi YOSHITAKE |
1st Author's Affiliation | Dept of Appl. Sci. for Electr. and Mater., Kyushu Univ.() |
2nd Author's Name | Shaban Abdel-Rady Ahmed MOHAMED |
2nd Author's Affiliation | Dept of Appl. Sci. for Electr. and Mater., Kyushu Univ. |
3rd Author's Name | Kazuhiro NAKAJIMA |
3rd Author's Affiliation | Dept of Appl. Sci. for Electr. and Mater., Kyushu Univ. |
4th Author's Name | Wararu YOKOYAMA |
4th Author's Affiliation | Dept of Appl. Sci. for Electr. and Mater., Kyushu Univ. |
5th Author's Name | Kunihito NAGAYAMA |
5th Author's Affiliation | Dept of Aero, and Astro., Kyushu Univ. |
Date | 2006/4/10 |
Paper # | ED2006-17,SDM2006-17,OME2006-17 |
Volume (vol) | vol.106 |
Number (no) | 7 |
Page | pp.pp.- |
#Pages | 4 |
Date of Issue |