Presentation 2006/4/10
Fabrication of β-FeSi_2/Si Hetero-junction and its Rectification
Tsuyoshi YOSHITAKE, Shaban Abdel-Rady Ahmed MOHAMED, Kazuhiro NAKAJIMA, Wararu YOKOYAMA, Kunihito NAGAYAMA,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) Semiconducting β-FeSi_2 thin films were epitaxially as-grown on Si (111) substrates at a substrate temperature of 600℃, which is at least 200℃ lower than ordinary annealing temperatures, by using the facing targets direct-current sputtering (FTDCS) method using an FeSi_2 target without annealing. The deposited film exhibits a smooth surface with a surface roughness root mean square of 1.47nm. The direct and indirect optical band gaps estimated from the experiment were in agreement with those of the single crystalline bulk. Temperature dependence of the electrical conductivity implied Co incorporation from the FeSi_2 targets with a purity of 3 N. The n-β-FeSi_2/p-Si hetero-junction showed a large reverse leakage current.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) β-FeSi_2 / iron disilicide / epitaxial growth / pnjunction
Paper # ED2006-17,SDM2006-17,OME2006-17
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Committee OME
Conference Date 2006/4/10(1days)
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Registration To Organic Material Electronics (OME)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Fabrication of β-FeSi_2/Si Hetero-junction and its Rectification
Sub Title (in English)
Keyword(1) β-FeSi_2
Keyword(2) iron disilicide
Keyword(3) epitaxial growth
Keyword(4) pnjunction
1st Author's Name Tsuyoshi YOSHITAKE
1st Author's Affiliation Dept of Appl. Sci. for Electr. and Mater., Kyushu Univ.()
2nd Author's Name Shaban Abdel-Rady Ahmed MOHAMED
2nd Author's Affiliation Dept of Appl. Sci. for Electr. and Mater., Kyushu Univ.
3rd Author's Name Kazuhiro NAKAJIMA
3rd Author's Affiliation Dept of Appl. Sci. for Electr. and Mater., Kyushu Univ.
4th Author's Name Wararu YOKOYAMA
4th Author's Affiliation Dept of Appl. Sci. for Electr. and Mater., Kyushu Univ.
5th Author's Name Kunihito NAGAYAMA
5th Author's Affiliation Dept of Aero, and Astro., Kyushu Univ.
Date 2006/4/10
Paper # ED2006-17,SDM2006-17,OME2006-17
Volume (vol) vol.106
Number (no) 7
Page pp.pp.-
#Pages 4
Date of Issue