Presentation 2006/4/10
Fabrication of low-resistivity ITO film with high electron carrier densities
A. Kono, S.N. Luo, T. Murakami, F. Shoji,
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Abstract(in English) Using a low-pressure plasma sputtering method, we prepared the ITO films on glass substrates and investigated the electrical properties as a function of the film thickness. In films prepared on the substrates of 250℃, we realized the low-resistivity ITO film of 1.0×10^<-4>Ωcm at thickness range larger than 200nm. From measurements of Hall mobility and carrier density in the films, it was found that the large increase of carrier density resulted in the low-resistivity. Comparing with the electrical properties of the films prepared on the substrates of "no heating", we suggested that the resistivity improvement is caused by the creation of oxygen vacancies generating anomalous electron carriers in the ITO films.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Transparent conductive oxide film / ITO film / low-pressure plasma sputtering / Sputtering film
Paper # ED2006-9,SDM2006-9,OME2006-9
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Committee OME
Conference Date 2006/4/10(1days)
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Registration To Organic Material Electronics (OME)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Fabrication of low-resistivity ITO film with high electron carrier densities
Sub Title (in English)
Keyword(1) Transparent conductive oxide film
Keyword(2) ITO film
Keyword(3) low-pressure plasma sputtering
Keyword(4) Sputtering film
1st Author's Name A. Kono
1st Author's Affiliation Faculty of Engineering, Kyushyu Kyoritsu University()
2nd Author's Name S.N. Luo
2nd Author's Affiliation Liaoning Institute of Technology
3rd Author's Name T. Murakami
3rd Author's Affiliation Faculty of Engineering, Kyushyu Kyoritsu University
4th Author's Name F. Shoji
4th Author's Affiliation Faculty of Engineering, Kyushyu Kyoritsu University
Date 2006/4/10
Paper # ED2006-9,SDM2006-9,OME2006-9
Volume (vol) vol.106
Number (no) 7
Page pp.pp.-
#Pages 5
Date of Issue