Presentation 2006-04-14
Worst-Case Analysis to Obtain Stable Read/Write DC Margin of High Density 6T-SRAM-Array with Local Vth Variability
Yasumasa TSUKAMOTO, Koji NII, Susumu IMAOKA, Yuji ODA, Shigeki OHBAYASHI, Makoto YABUUCHI, Hiroshi MAKINO, Koichiro ISHIBASHI, Hirofumi SHINOHARA,
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Abstract(in English) The 6T-SRAM cells in the sub-100nm CMOS generation are now being exposed to a fatal risk that originates from large local Vth variability (σ_). In this paper, to achieve high-yield SRAM array in presence of random σ_ component, we propose a worst-case analysis that determines the boundary of the stable Vth region for SRAM read/write DC margin (Vth Curve). Applying this method to our original 65nm SPICE model, we show some characteristic behavior of the Vth Curve. Throughout this paper, we suggest new criteria to discuss SRAM array stability with Vth variability.
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Keyword(in English) SRAM / Static Noise Margin / Local Vth Variability / Design for Manufacturability
Paper # ICD2006-18
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Conference Date 2006/4/6(1days)
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Language ENG
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Worst-Case Analysis to Obtain Stable Read/Write DC Margin of High Density 6T-SRAM-Array with Local Vth Variability
Sub Title (in English)
Keyword(1) SRAM
Keyword(2) Static Noise Margin
Keyword(3) Local Vth Variability
Keyword(4) Design for Manufacturability
1st Author's Name Yasumasa TSUKAMOTO
1st Author's Affiliation Renesas Technology Corporation()
2nd Author's Name Koji NII
2nd Author's Affiliation Renesas Technology Corporation
3rd Author's Name Susumu IMAOKA
3rd Author's Affiliation Renesas Design Corporation
4th Author's Name Yuji ODA
4th Author's Affiliation Shikino High-Tech
5th Author's Name Shigeki OHBAYASHI
5th Author's Affiliation Renesas Technology Corporation
6th Author's Name Makoto YABUUCHI
6th Author's Affiliation Renesas Technology Corporation
7th Author's Name Hiroshi MAKINO
7th Author's Affiliation Renesas Technology Corporation
8th Author's Name Koichiro ISHIBASHI
8th Author's Affiliation Renesas Technology Corporation
9th Author's Name Hirofumi SHINOHARA
9th Author's Affiliation Renesas Technology Corporation
Date 2006-04-14
Paper # ICD2006-18
Volume (vol) vol.106
Number (no) 2
Page pp.pp.-
#Pages 6
Date of Issue