Presentation 2006-03-03
2-46GHz Band m-HEMT MMIC Traveling Wave Amplifier
Hiro-omi Ueda, Kazutomi Mori, Noriharu Suematsu,
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Abstract(in English) We developed traveling wave amplifiers using metamorphic High Electron Mobility Transistor (m-HEMT). The fabricated amplifiers with cascode configured-nine unit cells show that the stability and the bandwidth enhancement of amplifiers are obtained by setting the capacitance in several hundred of farads and the resistance in several tens of ohms. The amplifier achieves a gain of 11dB, a bandwidth of 46GHz, a group delay of 90s, and P1dB of 17.5dBm.
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Keyword(in English) m-HEMT / Traveling Wave Amplifier / Cascode
Paper # MW2005-181
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Committee MW
Conference Date 2006/2/24(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) 2-46GHz Band m-HEMT MMIC Traveling Wave Amplifier
Sub Title (in English)
Keyword(1) m-HEMT
Keyword(2) Traveling Wave Amplifier
Keyword(3) Cascode
1st Author's Name Hiro-omi Ueda
1st Author's Affiliation Information Technology R&D Center, Mitsubishi Electric Corp.()
2nd Author's Name Kazutomi Mori
2nd Author's Affiliation Information Technology R&D Center, Mitsubishi Electric Corp.
3rd Author's Name Noriharu Suematsu
3rd Author's Affiliation Information Technology R&D Center, Mitsubishi Electric Corp.
Date 2006-03-03
Paper # MW2005-181
Volume (vol) vol.105
Number (no) 626
Page pp.pp.-
#Pages 4
Date of Issue