Presentation | 2006-02-17 Si Nano-Photodiode with a Surface Plasmon Antenna Junichi FUJIKATA, Tsutomu ISHI, Kenichi NISHI, Keishi OHASHI, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | We studied the SP resonance effect on Si nano-photodiode characteristics for future optical interconnections on LSI chips. The photocurrent was highly enhanced by using a surface plasmon antenna. The transient response measurement on a Si nano-photodiode shows a response peak with a FWHM of 20 ps. These results show the validity of the SP resonance effect on high bandwidth as well as high efficiency for Si nano-photodiodes. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | surface plasmon / near-field / Si photodiode |
Paper # | OPE2005-154 |
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Committee | OPE |
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Conference Date | 2006/2/10(1days) |
Place (in Japanese) | (See Japanese page) |
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Registration To | Optoelectronics (OPE) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Si Nano-Photodiode with a Surface Plasmon Antenna |
Sub Title (in English) | |
Keyword(1) | surface plasmon |
Keyword(2) | near-field |
Keyword(3) | Si photodiode |
1st Author's Name | Junichi FUJIKATA |
1st Author's Affiliation | Fandamental and Environmental Research Laboratories, NEC Corporation() |
2nd Author's Name | Tsutomu ISHI |
2nd Author's Affiliation | Fandamental and Environmental Research Laboratories, NEC Corporation |
3rd Author's Name | Kenichi NISHI |
3rd Author's Affiliation | Fandamental and Environmental Research Laboratories, NEC Corporation |
4th Author's Name | Keishi OHASHI |
4th Author's Affiliation | Fandamental and Environmental Research Laboratories, NEC Corporation |
Date | 2006-02-17 |
Paper # | OPE2005-154 |
Volume (vol) | vol.105 |
Number (no) | 606 |
Page | pp.pp.- |
#Pages | 5 |
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