| Presentation | 2006-02-17 Uncooled 10-Gb/s AlGaInAs-MQW-FP-LD with Ruthenium doped semi-insulating InP buried heterostructure Kiyotaka TSURUOKA, Ryuji KOBAYASHI, Koichi NANIWAE, Keiichi TOKUTOME, Youichi OHSAWA, Tomoaki KATO, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We have developed the first 1.3-μm AlGaInAs-MQW-FP-LD with ruthenium (Ru) doped InP buried heterostructure by narrow-stripe selective MOVPE. The device showed practical L-I characteristics comparable to a conventional uncooled LD buried with the Fe-doped InP and operated up to 170℃. 10-Gb/s operation up to 120℃ and more than 3,500-hour reliability under 85-℃ APC test has been successfully achieved. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | AlGaInAs / ruthenium (Ru) / buried heterostructure (BH) / narrow-stripe selective MOVPE / Fabry-Perot LD (FP-LD) / direct modulation / uncooled operation |
| Paper # | OPE2005-153 |
| Date of Issue |
| Conference Information | |
| Committee | OPE |
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| Conference Date | 2006/2/10(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Optoelectronics (OPE) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Uncooled 10-Gb/s AlGaInAs-MQW-FP-LD with Ruthenium doped semi-insulating InP buried heterostructure |
| Sub Title (in English) | |
| Keyword(1) | AlGaInAs |
| Keyword(2) | ruthenium (Ru) |
| Keyword(3) | buried heterostructure (BH) |
| Keyword(4) | narrow-stripe selective MOVPE |
| Keyword(5) | Fabry-Perot LD (FP-LD) |
| Keyword(6) | direct modulation |
| Keyword(7) | uncooled operation |
| 1st Author's Name | Kiyotaka TSURUOKA |
| 1st Author's Affiliation | System Devices Research Laboratories, NEC Corporation() |
| 2nd Author's Name | Ryuji KOBAYASHI |
| 2nd Author's Affiliation | System Devices Research Laboratories, NEC Corporation |
| 3rd Author's Name | Koichi NANIWAE |
| 3rd Author's Affiliation | System Devices Research Laboratories, NEC Corporation |
| 4th Author's Name | Keiichi TOKUTOME |
| 4th Author's Affiliation | System Devices Research Laboratories, NEC Corporation |
| 5th Author's Name | Youichi OHSAWA |
| 5th Author's Affiliation | System Devices Research Laboratories, NEC Corporation |
| 6th Author's Name | Tomoaki KATO |
| 6th Author's Affiliation | System Devices Research Laboratories, NEC Corporation |
| Date | 2006-02-17 |
| Paper # | OPE2005-153 |
| Volume (vol) | vol.105 |
| Number (no) | 606 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |