Presentation 2006-02-17
Fabrication of amorphous Si/SiO_2 superlattices by using RF sputtering and their luminescence properties
Yuji KATO, Takeshi TANEMURA, Hitomi HOSHINO, Kenta MIURA, Osamu HANAIZUMI,
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Abstract(in English) We made a comparative study on luminescent properties of amorphous Si/SiO_2 superlattices fabricated by using RF sputtering having various thickness of Si and SiO2 layers. The samples showed a tendency that their photoluminescence (PL) peaks shift to low photon energy for the Si content of the superlattice after annealing at 1100℃. Moreover, we found that they showed ultraviolet PL part at room temperature after annealing 1150℃ to 1250℃. The PL peak position was 3.4eV and the full width half maximum(FWHM) was 0.20eV.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) superlattice / red photoluminescence / urtlaviolet photoluminescence / amorphous Si / SiO_2 / RF sputtering
Paper # OPE2005-152
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Committee OPE
Conference Date 2006/2/10(1days)
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Registration To Optoelectronics (OPE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Fabrication of amorphous Si/SiO_2 superlattices by using RF sputtering and their luminescence properties
Sub Title (in English)
Keyword(1) superlattice
Keyword(2) red photoluminescence
Keyword(3) urtlaviolet photoluminescence
Keyword(4) amorphous Si
Keyword(5) SiO_2
Keyword(6) RF sputtering
1st Author's Name Yuji KATO
1st Author's Affiliation Gunma University()
2nd Author's Name Takeshi TANEMURA
2nd Author's Affiliation Gunma University
3rd Author's Name Hitomi HOSHINO
3rd Author's Affiliation Gunma University
4th Author's Name Kenta MIURA
4th Author's Affiliation Gunma University
5th Author's Name Osamu HANAIZUMI
5th Author's Affiliation Gunma University
Date 2006-02-17
Paper # OPE2005-152
Volume (vol) vol.105
Number (no) 606
Page pp.pp.-
#Pages 5
Date of Issue