| Presentation | 2006/1/30 Stress Analyses of BEOL Structure with Copper Interconnects Masako KODERA, Shigeru KAKINUMA, Giuseppe PEZZOTTI, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Engineering of the stress fields related to the backend process of LSI devices with Cu interconnects is required together with the adoption of low-k materials that have quite low Young's modulus. We measured the nano-scale residual stresses in interlayer dielectric (ILD) films by cathodoluminescence (CL) piezo-spectroscopic technique. The SiO_2 film (k=4.1) produced a sharp and stable spectrum, which well suited for the analysis of stress distribution. In the result of the line analysis on the surface, a stress shift more markedly appears on the compressive side in the neighborhood of the Cu line, which is explained by the mismatch between the coefficient of thermal expansion (CTE) of Cu and SiO_2, while a tensile shift appears at the SiO_2 laid between the Cu lines, which can be attributed to chemical mechanical planarization (CMP) processing showing good agreement with the FEM results. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Stress / ILD / Cathodoluminescence / FEM |
| Paper # | SDM2005-258 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 2006/1/30(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Vice Chair | |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Stress Analyses of BEOL Structure with Copper Interconnects |
| Sub Title (in English) | |
| Keyword(1) | Stress |
| Keyword(2) | ILD |
| Keyword(3) | Cathodoluminescence |
| Keyword(4) | FEM |
| 1st Author's Name | Masako KODERA |
| 1st Author's Affiliation | Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corp.() |
| 2nd Author's Name | Shigeru KAKINUMA |
| 2nd Author's Affiliation | R&D Center, Horiba, Ltd. |
| 3rd Author's Name | Giuseppe PEZZOTTI |
| 3rd Author's Affiliation | Dept. Chemistry and Materials Engineering, Kyoto Institute of Technology |
| Date | 2006/1/30 |
| Paper # | SDM2005-258 |
| Volume (vol) | vol.105 |
| Number (no) | 598 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |