| Presentation | 2006/1/30 Stress-Induced Voiding under Vias Connected to "Narrow" Copper Lines T. Kouno, T. Suzuki, S. Otsuka, T. Hosoda, T. Nakamura, Y. Mizushima, M. Shiozu, H. Matsuyama, K. Shono, H. Watatani, Y. Ohkura, M. Sato, S. Fukuyama, M. Miyajima, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Stress-induced voiding under vias connected to "narrow" Copper (Cu) lines (SIV-N) was observed, for the first time, using newly prepared test structures which consisted of isolated vias between narrow (0.14μm-wide) and very long (200μm-long) 2-level Cu wires. Mechanism of SIV-N is different from that of well-known stress-induced voiding under vias connected to "wide" Cu lines (SIV-W), because SIV-N cannot occur during actual time according to the model that explains SIV-W. In addition, we found the effect of plasma pretreatment of cap dielectrics and cap dielectrics themselves on SIV-N and the other reliability issues, and succeeded in obtaining the condition which satisfied SIV-N, SIV-W and Electromigration. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Cu / Interconnects / Stress-induced voiding / Electromigration |
| Paper # | SDM2005-257 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 2006/1/30(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Stress-Induced Voiding under Vias Connected to "Narrow" Copper Lines |
| Sub Title (in English) | |
| Keyword(1) | Cu |
| Keyword(2) | Interconnects |
| Keyword(3) | Stress-induced voiding |
| Keyword(4) | Electromigration |
| 1st Author's Name | T. Kouno |
| 1st Author's Affiliation | FUJITSU Limited() |
| 2nd Author's Name | T. Suzuki |
| 2nd Author's Affiliation | FUJITSU Laboratories Limited |
| 3rd Author's Name | S. Otsuka |
| 3rd Author's Affiliation | FUJITSU Limited |
| 4th Author's Name | T. Hosoda |
| 4th Author's Affiliation | FUJITSU Limited |
| 5th Author's Name | T. Nakamura |
| 5th Author's Affiliation | FUJITSU Laboratories Limited |
| 6th Author's Name | Y. Mizushima |
| 6th Author's Affiliation | FUJITSU Laboratories Limited |
| 7th Author's Name | M. Shiozu |
| 7th Author's Affiliation | FUJITSU Limited |
| 8th Author's Name | H. Matsuyama |
| 8th Author's Affiliation | FUJITSU Limited |
| 9th Author's Name | K. Shono |
| 9th Author's Affiliation | FUJITSU Limited |
| 10th Author's Name | H. Watatani |
| 10th Author's Affiliation | FUJITSU Limited |
| 11th Author's Name | Y. Ohkura |
| 11th Author's Affiliation | FUJITSU Limited |
| 12th Author's Name | M. Sato |
| 12th Author's Affiliation | FUJITSU Limited |
| 13th Author's Name | S. Fukuyama |
| 13th Author's Affiliation | FUJITSU Limited |
| 14th Author's Name | M. Miyajima |
| 14th Author's Affiliation | FUJITSU Limited |
| Date | 2006/1/30 |
| Paper # | SDM2005-257 |
| Volume (vol) | vol.105 |
| Number (no) | 598 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |