| Presentation | 2006/1/30 45nm-node Dual Damascene Interconnects with Low-oxygen-content Cu-alloy Mari ABE, Munehiro TADA, Hiroto OHTAKE, Naoya FURUTAKE, Mitsuru NARIHIRO, Koichi ARAI, Tsuneo TAKEUCH, Shinobu SAITO, Fuminori ITO, Hiroki YAMAMOTO, Masayoshi TAGAMI, Noriaki ODA, Makoto SEKINE, Yoshihiro HAYASHI, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | By a novel oxygen absorption process, low-oxygen-content (LOC) Cu-alloy is implemented for fully-scaled-down, 45nm-node dual damascene interconnects (DDIs) with 140nm-pitched lines and 70nm^φ-vias. In this process, a very thin metal film as an oxygen absorber, which has larger negative change in the standard Gibbs free energy of oxidation than a barrier metal, is put on a natural oxide at a surface of electro-plated, Cu film. The oxygen atoms diffuse to the oxygen absorber, not to the barrier metal under the Cu film, achieving high quality Cu/barrier interface after annealing. Combining the oxygen absorption process with Cu-alloy process, 45nm-node DDI in molecular-pore-stacking (MPS) SiOCH film is successfully obtained with high endurances for SIV, EM and TDDB. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Cu-alloy / Interconnect / Dual Damascene / Barrier metal / Oxidation / Free energy |
| Paper # | SDM2005-256 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 2006/1/30(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | 45nm-node Dual Damascene Interconnects with Low-oxygen-content Cu-alloy |
| Sub Title (in English) | |
| Keyword(1) | Cu-alloy |
| Keyword(2) | Interconnect |
| Keyword(3) | Dual Damascene |
| Keyword(4) | Barrier metal |
| Keyword(5) | Oxidation |
| Keyword(6) | Free energy |
| 1st Author's Name | Mari ABE |
| 1st Author's Affiliation | System Devices Research Labs., NEC Corporation() |
| 2nd Author's Name | Munehiro TADA |
| 2nd Author's Affiliation | System Devices Research Labs., NEC Corporation |
| 3rd Author's Name | Hiroto OHTAKE |
| 3rd Author's Affiliation | System Devices Research Labs., NEC Corporation |
| 4th Author's Name | Naoya FURUTAKE |
| 4th Author's Affiliation | System Devices Research Labs., NEC Corporation |
| 5th Author's Name | Mitsuru NARIHIRO |
| 5th Author's Affiliation | System Devices Research Labs., NEC Corporation |
| 6th Author's Name | Koichi ARAI |
| 6th Author's Affiliation | System Devices Research Labs., NEC Corporation |
| 7th Author's Name | Tsuneo TAKEUCH |
| 7th Author's Affiliation | System Devices Research Labs., NEC Corporation |
| 8th Author's Name | Shinobu SAITO |
| 8th Author's Affiliation | System Devices Research Labs., NEC Corporation |
| 9th Author's Name | Fuminori ITO |
| 9th Author's Affiliation | System Devices Research Labs., NEC Corporation |
| 10th Author's Name | Hiroki YAMAMOTO |
| 10th Author's Affiliation | System Devices Research Labs., NEC Corporation |
| 11th Author's Name | Masayoshi TAGAMI |
| 11th Author's Affiliation | System Devices Research Labs., NEC Corporation |
| 12th Author's Name | Noriaki ODA |
| 12th Author's Affiliation | NEC Electronics |
| 13th Author's Name | Makoto SEKINE |
| 13th Author's Affiliation | NEC Electronics |
| 14th Author's Name | Yoshihiro HAYASHI |
| 14th Author's Affiliation | System Devices Research Labs., NEC Corporation |
| Date | 2006/1/30 |
| Paper # | SDM2005-256 |
| Volume (vol) | vol.105 |
| Number (no) | 598 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |