Presentation 2006/1/30
Influence of Cu-CMP Process on Defects in SiOC Films and TDDB Reliability
Nobuhiro Konishi, Youhei Yamada, Junji Noguchi, Tomoko Jimbo,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) The relationship between the TDDB reliability and defects in the Cu-CMP process, such as corrosions, scratches and pitting, was investigated using Cu/SiOC interconnects. Scratches on the SiOC surface degrade the TDDB lifetime. Cu corrosions generate at edges of wires and this also results in the TDDB degradation. The slurry without the BTA solutions causes not only pitting but also Cu dissolution. In this condition some dissolved Cu atoms remain on the SiOC surface between adjacent Cu wires. This also leads to the TDDB degradation. It is essential to prevent scratches, corrosions and pitting to improve the TDDB reliability.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) CMP / Cu / SiOC / TDDB / Defects / Scratches / Corrosions / Pitting / Reliability
Paper # SDM2005-255
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Conference Information
Committee SDM
Conference Date 2006/1/30(1days)
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Paper Information
Registration To Silicon Device and Materials (SDM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Influence of Cu-CMP Process on Defects in SiOC Films and TDDB Reliability
Sub Title (in English)
Keyword(1) CMP
Keyword(2) Cu
Keyword(3) SiOC
Keyword(4) TDDB
Keyword(5) Defects
Keyword(6) Scratches
Keyword(7) Corrosions
Keyword(8) Pitting
Keyword(9) Reliability
1st Author's Name Nobuhiro Konishi
1st Author's Affiliation Micro Device Devision, Hitachi, Ltd.()
2nd Author's Name Youhei Yamada
2nd Author's Affiliation Micro Device Devision, Hitachi, Ltd.
3rd Author's Name Junji Noguchi
3rd Author's Affiliation Micro Device Devision, Hitachi, Ltd.
4th Author's Name Tomoko Jimbo
4th Author's Affiliation Micro Device Devision, Hitachi, Ltd.
Date 2006/1/30
Paper # SDM2005-255
Volume (vol) vol.105
Number (no) 598
Page pp.pp.-
#Pages 6
Date of Issue