Presentation 2006/1/30
Cu surface treatment using a hot-filament hydrogen radical source
Eiichi KONDOH, Masaya FUKASAWA,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) In response to miniaturization in ULSI processing down to nano scale, novel and gentle approaches have become concerned to replace conventional ways using energetic and/or charged particles. The hot filament is a conventional radical source that has been used in molecular bean epitaxy and chemical vapor deposition. Using the hot filament has been recently gaining much attention in view of ULSI processing because of its easiness in solving the aforementioned issues. However, a limited number of studies have been published in the field of back-end-of-the-line processing. This study intends to apply a hot filament hydrogen radical source to Cu surface cleaning. As a case study, we demonstrate the reduction of sputtered CuO and thermally-oxidized Cu to metallic Cu. A very short exposure to the radical source resulted in the formation of several tens of nm metallic Cu. The reduction temperature needed was below 150C, which was found to be much lower than the reduction temperature using molecular hydrogen.
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Keyword(in English) hot filament / hydrogen radicals / Cu / Cu oxide
Paper # SDM2005-253
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Conference Information
Committee SDM
Conference Date 2006/1/30(1days)
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Paper Information
Registration To Silicon Device and Materials (SDM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Cu surface treatment using a hot-filament hydrogen radical source
Sub Title (in English)
Keyword(1) hot filament
Keyword(2) hydrogen radicals
Keyword(3) Cu
Keyword(4) Cu oxide
1st Author's Name Eiichi KONDOH
1st Author's Affiliation Yamanashi University()
2nd Author's Name Masaya FUKASAWA
2nd Author's Affiliation Yamanashi University
Date 2006/1/30
Paper # SDM2005-253
Volume (vol) vol.105
Number (no) 598
Page pp.pp.-
#Pages 5
Date of Issue