| Presentation | 2006-01-27 Fluoride based Resonant Tunneling Diode on Si(100) substrate using Nanoarea Local Growth Tohru KANAZAWA, Atsushi MOROSAWA, Ryo FUJII, Takafumi WADA, Masahiro WATANABE, Masahiro ASADA, |
|---|---|
| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | A CdF_2/CaF_2 heterostructure is an attractive candidate for quantum applications on Si substrates, such as resonant tunneling diodes (RTDs) and quantum intersubband transition devices, because of the large conduction band discontinuity (ΔEc～2.9eV) at the heterointerface. We have observed clear NDR with high PVCR for fluoride-based DBRTDs on Si(100) substrates by nanoarea local epitaxy. Crystal growth areas were limited by 15-nm-thick SiO_2 insulator layer and holes with a diameter of 80nm were observed. And bottom CaF_2 layer was post-growth annealed at 500℃. The PVCR obtained was more than 10^6, Which is the highest for fluoride-based RTDs on Si(100) substrates. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | RTD / NDR / quantum / CaF_2 / CdF_2 / Silicon |
| Paper # | ED2005-233,SDM2005-245 |
| Date of Issue |
| Conference Information | |
| Committee | SDM |
|---|---|
| Conference Date | 2006/1/20(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
|---|---|
| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Fluoride based Resonant Tunneling Diode on Si(100) substrate using Nanoarea Local Growth |
| Sub Title (in English) | |
| Keyword(1) | RTD |
| Keyword(2) | NDR |
| Keyword(3) | quantum |
| Keyword(4) | CaF_2 |
| Keyword(5) | CdF_2 |
| Keyword(6) | Silicon |
| 1st Author's Name | Tohru KANAZAWA |
| 1st Author's Affiliation | Interdisciplinary Graduate School of Science and Engineering, Tokyo Tech() |
| 2nd Author's Name | Atsushi MOROSAWA |
| 2nd Author's Affiliation | Interdisciplinary Graduate School of Science and Engineering, Tokyo Tech |
| 3rd Author's Name | Ryo FUJII |
| 3rd Author's Affiliation | Interdisciplinary Graduate School of Science and Engineering, Tokyo Tech |
| 4th Author's Name | Takafumi WADA |
| 4th Author's Affiliation | Interdisciplinary Graduate School of Science and Engineering, Tokyo Tech |
| 5th Author's Name | Masahiro WATANABE |
| 5th Author's Affiliation | Interdisciplinary Graduate School of Science and Engineering, Tokyo Tech:SORST-JST |
| 6th Author's Name | Masahiro ASADA |
| 6th Author's Affiliation | Interdisciplinary Graduate School of Science and Engineering, Tokyo Tech |
| Date | 2006-01-27 |
| Paper # | ED2005-233,SDM2005-245 |
| Volume (vol) | vol.105 |
| Number (no) | 552 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |