| Presentation | 2006/1/13 Technology development of 128Mb-FBC(Floating Body Cell) Memory by 90nm CMOS process Yoshihiro MINAMI, Tomoaki SHINO, Atsushi SAKAMOTO, Tomoki HIGASHI, Naoki KUSUNOKI, Katsuyuki FUJITA, Kosuke HATSUDA, Takashi OHSAWA, Nobutoshi AOKI, Hiroyoshi TANIMOTO, Mutsuo MORIKADO, Hiroomi NAKAJIMA, Kazumi INOH, Takeshi HAMAMOTO, Akihiro NITAYAMA, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | A 128Mb SOI DRAM with FBC (Floating Body Cell) has been successfully developed for the first time. In order to realize full functionality and good retention characteristics, the well design has been optimized. Cu wiring has been used for Bit Line(BL) and Source Line(SL), which leads to increasing the signal of the worst bit in the array and also realizes the full compatibility with 90nm CMOS Technology. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | FBC / SOI / DRAM / Cu / Memory / Embeded / 90nm / CMOS |
| Paper # | SDM2005-235 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 2006/1/13(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Technology development of 128Mb-FBC(Floating Body Cell) Memory by 90nm CMOS process |
| Sub Title (in English) | |
| Keyword(1) | FBC |
| Keyword(2) | SOI |
| Keyword(3) | DRAM |
| Keyword(4) | Cu |
| Keyword(5) | Memory |
| Keyword(6) | Embeded |
| Keyword(7) | 90nm |
| Keyword(8) | CMOS |
| 1st Author's Name | Yoshihiro MINAMI |
| 1st Author's Affiliation | SoC Research and Development Center, Toshiba Corp.() |
| 2nd Author's Name | Tomoaki SHINO |
| 2nd Author's Affiliation | SoC Research and Development Center, Toshiba Corp. |
| 3rd Author's Name | Atsushi SAKAMOTO |
| 3rd Author's Affiliation | Toshiba Information Systems(Japan) Corp. |
| 4th Author's Name | Tomoki HIGASHI |
| 4th Author's Affiliation | Toshiba Microelectronics Corp. |
| 5th Author's Name | Naoki KUSUNOKI |
| 5th Author's Affiliation | SoC Research and Development Center, Toshiba Corp. |
| 6th Author's Name | Katsuyuki FUJITA |
| 6th Author's Affiliation | SoC Research and Development Center, Toshiba Corp. |
| 7th Author's Name | Kosuke HATSUDA |
| 7th Author's Affiliation | SoC Research and Development Center, Toshiba Corp. |
| 8th Author's Name | Takashi OHSAWA |
| 8th Author's Affiliation | SoC Research and Development Center, Toshiba Corp. |
| 9th Author's Name | Nobutoshi AOKI |
| 9th Author's Affiliation | SoC Research and Development Center, Toshiba Corp. |
| 10th Author's Name | Hiroyoshi TANIMOTO |
| 10th Author's Affiliation | SoC Research and Development Center, Toshiba Corp. |
| 11th Author's Name | Mutsuo MORIKADO |
| 11th Author's Affiliation | SoC Research and Development Center, Toshiba Corp. |
| 12th Author's Name | Hiroomi NAKAJIMA |
| 12th Author's Affiliation | SoC Research and Development Center, Toshiba Corp. |
| 13th Author's Name | Kazumi INOH |
| 13th Author's Affiliation | SoC Research and Development Center, Toshiba Corp. |
| 14th Author's Name | Takeshi HAMAMOTO |
| 14th Author's Affiliation | SoC Research and Development Center, Toshiba Corp. |
| 15th Author's Name | Akihiro NITAYAMA |
| 15th Author's Affiliation | SoC Research and Development Center, Toshiba Corp. |
| Date | 2006/1/13 |
| Paper # | SDM2005-235 |
| Volume (vol) | vol.105 |
| Number (no) | 541 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |