| Presentation | 2006/1/13 Practical FinFET Design Considering GIDL for LSTP Devices Katsuhiko TANAKA, Kiyoshi TAKEUCHI, Masami HANE, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Practical design of double-gate undoped-channel FinFET has been investigated through 3D device simulations considering gate-induced drain leakage (GIDL). Optimization of FinFET structure was carried out for hp45 low standby power (LSTP) device (L_g=25nm). GIDL is reduced by using gradual and offset source/drain (S/D) profile while degradation of drive current is minimized. Through the optimization of lateral spread and offset of S/D profile, the ITRS specifications for drive current and off-state leakage current are achievable. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | FinFET / double gate / GIDL / device simulation / LSTP |
| Paper # | SDM2005-233 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 2006/1/13(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Practical FinFET Design Considering GIDL for LSTP Devices |
| Sub Title (in English) | |
| Keyword(1) | FinFET |
| Keyword(2) | double gate |
| Keyword(3) | GIDL |
| Keyword(4) | device simulation |
| Keyword(5) | LSTP |
| 1st Author's Name | Katsuhiko TANAKA |
| 1st Author's Affiliation | System Devices Res. Labs., NEC Corp.() |
| 2nd Author's Name | Kiyoshi TAKEUCHI |
| 2nd Author's Affiliation | System Devices Res. Labs., NEC Corp. |
| 3rd Author's Name | Masami HANE |
| 3rd Author's Affiliation | System Devices Res. Labs., NEC Corp. |
| Date | 2006/1/13 |
| Paper # | SDM2005-233 |
| Volume (vol) | vol.105 |
| Number (no) | 541 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |