Presentation 2006-01-17
Multuiple Programming Method and Circuit Design for a Phase Change Nonvolatile Random Access Memory
Takatomi IZUMI, Masashi TAKATA, Kazuya NAKAYAMA, Akio KITAGAWA,
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Abstract(in English) A novel multiple programming method for a phase change nonvolatile randam access memory(PRAM) is proposed. PRAM uses chalcogenide alloy for memory element. We have experimentally observed 8-valued resistance in the range of 41kΩ-836Ω at the Se_<15>Sb_<15>Te_<70> discrete memory cell(3bit/cell) that controlled by the number of the applied current pulses. On the basis of this experimental results, the 8-valued memory circuit was designed with 0.35-um CMOS technology. It has been confirmed with a circuit simulation for 1024×512 cell array that read and write time are 50ns and 4.5us respectively at 3.3V supply voltage.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Multi-bit / PRAM / OUM / Phase change material
Paper # VLD2005-94,CPSY2005-50,RECONF2005-83
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Committee RECONF
Conference Date 2006/1/10(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Multuiple Programming Method and Circuit Design for a Phase Change Nonvolatile Random Access Memory
Sub Title (in English)
Keyword(1) Multi-bit
Keyword(2) PRAM
Keyword(3) OUM
Keyword(4) Phase change material
1st Author's Name Takatomi IZUMI
1st Author's Affiliation Faculty of Engineering, Kanazawa University()
2nd Author's Name Masashi TAKATA
2nd Author's Affiliation Faculty of Engineering, Kanazawa University
3rd Author's Name Kazuya NAKAYAMA
3rd Author's Affiliation School of Health Sciences, Kanazawa University
4th Author's Name Akio KITAGAWA
4th Author's Affiliation Faculty of Engineering, Kanazawa University
Date 2006-01-17
Paper # VLD2005-94,CPSY2005-50,RECONF2005-83
Volume (vol) vol.105
Number (no) 517
Page pp.pp.-
#Pages 6
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