Presentation 2006-01-19
Highly-Uniform GaN-HEMT on 3-inch Conductive SiC Substrate for Wireless Base Station Application
Toshihide KIKKAWA, Kenji IMANISHI, Masahito KANAMURA, Kazukiyo JOSHIN,
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Abstract(in English) AlGaN/GaN high electron mobility transistors (HEMTs) were fabricated on low-cost 3-inch conductive n-SiC substrates. A GaN HEMT amplifier, operating at 60V, achieved an output power density of 7.0W/mm, and a power-added-efficiency of 70% at 2GHz. Standard variations of PAE at 50V was 3.0 point.
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Keyword(in English) GaN / HEMT / base station / SiC / AlN
Paper # ED2005-207,MW2005-161
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Committee MW
Conference Date 2006/1/12(1days)
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Registration To Microwaves (MW)
Language JPN
Title (in Japanese) (See Japanese page)
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Title (in English) Highly-Uniform GaN-HEMT on 3-inch Conductive SiC Substrate for Wireless Base Station Application
Sub Title (in English)
Keyword(1) GaN
Keyword(2) HEMT
Keyword(3) base station
Keyword(4) SiC
Keyword(5) AlN
1st Author's Name Toshihide KIKKAWA
1st Author's Affiliation Fujitsu Laboratories Ltd.()
2nd Author's Name Kenji IMANISHI
2nd Author's Affiliation Fujitsu Laboratories Ltd.
3rd Author's Name Masahito KANAMURA
3rd Author's Affiliation Fujitsu Laboratories Ltd.
4th Author's Name Kazukiyo JOSHIN
4th Author's Affiliation Fujitsu Laboratories Ltd.
Date 2006-01-19
Paper # ED2005-207,MW2005-161
Volume (vol) vol.105
Number (no) 524
Page pp.pp.-
#Pages 5
Date of Issue