Presentation | 2006-01-19 Highly-Uniform GaN-HEMT on 3-inch Conductive SiC Substrate for Wireless Base Station Application Toshihide KIKKAWA, Kenji IMANISHI, Masahito KANAMURA, Kazukiyo JOSHIN, |
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PDF Download Page | PDF download Page Link |
Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | AlGaN/GaN high electron mobility transistors (HEMTs) were fabricated on low-cost 3-inch conductive n-SiC substrates. A GaN HEMT amplifier, operating at 60V, achieved an output power density of 7.0W/mm, and a power-added-efficiency of 70% at 2GHz. Standard variations of PAE at 50V was 3.0 point. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | GaN / HEMT / base station / SiC / AlN |
Paper # | ED2005-207,MW2005-161 |
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Conference Information | |
Committee | MW |
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Conference Date | 2006/1/12(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Microwaves (MW) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Highly-Uniform GaN-HEMT on 3-inch Conductive SiC Substrate for Wireless Base Station Application |
Sub Title (in English) | |
Keyword(1) | GaN |
Keyword(2) | HEMT |
Keyword(3) | base station |
Keyword(4) | SiC |
Keyword(5) | AlN |
1st Author's Name | Toshihide KIKKAWA |
1st Author's Affiliation | Fujitsu Laboratories Ltd.() |
2nd Author's Name | Kenji IMANISHI |
2nd Author's Affiliation | Fujitsu Laboratories Ltd. |
3rd Author's Name | Masahito KANAMURA |
3rd Author's Affiliation | Fujitsu Laboratories Ltd. |
4th Author's Name | Kazukiyo JOSHIN |
4th Author's Affiliation | Fujitsu Laboratories Ltd. |
Date | 2006-01-19 |
Paper # | ED2005-207,MW2005-161 |
Volume (vol) | vol.105 |
Number (no) | 524 |
Page | pp.pp.- |
#Pages | 5 |
Date of Issue |