Presentation	2006-01-19 0.15-μm dual-gate AlGaN/GaN HEMT mixers Kenji SHIOJIMA, Takashi MAKIMURA, Toshihiko KOSUGI, Tetsuya SUEMITSU, Naoteru SHIGEKAWA, Masanobu HIROKI, Haruki YAKOYAMA,
PDF Download Page	PDF download Page Link
Abstract(in Japanese)	(See Japanese page)
Abstract(in English)	We have fabricated dual-gate AlGaN/GaN high-electron-mobility transistors (HEMTs) with a short gate on SiC substrates for use in high-power mixers and have measured the DC and up-conversion RF characteristics. A device with a T-shaped gate (0.15μm×300μm) exhibits a maximum transconductance of 40mS, an on-state breakdown voltage of over 30V, and off-state breakdown voltage of 86V. The maximum RF output power (P_) is 17dBm, and the up-conversion gain is 7.5dB at a frequency of 10GHz when the bias point voltage is 30V. As the local frequency increases from 2 to 10GHz, P_ and the gain decrease by only 2 and 2.6dB, respectively. Shortening the gate was found to be effective in improving the frequency characteristics of a mixer at frequencies up to and including the X-band.
Keyword(in Japanese)	(See Japanese page)
Keyword(in English)	AlGaN/GaN HEMT / Dual-gate structure / High-power mixer / Short gate
Paper #	ED2005-206,MW2005-160
Date of Issue

Conference Information
Committee	MW
Conference Date	2006/1/12(1days)
Place (in Japanese)	(See Japanese page)
Place (in English)
Topics (in Japanese)	(See Japanese page)
Topics (in English)
Chair
Vice Chair
Secretary
Assistant

Paper Information
Registration To	Microwaves (MW)
Language	ENG
Title (in Japanese)	(See Japanese page)
Sub Title (in Japanese)	(See Japanese page)
Title (in English)	0.15-μm dual-gate AlGaN/GaN HEMT mixers
Sub Title (in English)
Keyword(1)	AlGaN/GaN HEMT
Keyword(2)	Dual-gate structure
Keyword(3)	High-power mixer
Keyword(4)	Short gate
1st Author's Name	Kenji SHIOJIMA
1st Author's Affiliation	NTT Corporation NTT Photonics Laboratories()
2nd Author's Name	Takashi MAKIMURA
2nd Author's Affiliation	NTT Corporation NTT Photonics Laboratories
3rd Author's Name	Toshihiko KOSUGI
3rd Author's Affiliation	NTT Corporation NTT Photonics Laboratories
4th Author's Name	Tetsuya SUEMITSU
4th Author's Affiliation	NTT Corporation NTT Photonics Laboratories
5th Author's Name	Naoteru SHIGEKAWA
5th Author's Affiliation	NTT Corporation NTT Photonics Laboratories
6th Author's Name	Masanobu HIROKI
6th Author's Affiliation	NTT Corporation NTT Photonics Laboratories
7th Author's Name	Haruki YAKOYAMA
7th Author's Affiliation	NTT Corporation NTT Photonics Laboratories
Date	2006-01-19
Paper #	ED2005-206,MW2005-160
Volume (vol)	vol.105
Number (no)	524
Page	pp.pp.-
#Pages	4
Date of Issue