| Presentation | 2006-01-19 AlGaN/GaN-HEMTs with Recessed Ohmic Electrodes on Si Substrates Juro MITA, Katsuaki KAIFU, Masanori ITO, Yoshiaki SANO, Hiroyasu ISHIKAWA, Takashi EGAWA, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We successfully fabricated AlGaN/GaN-HEMTs (High Electron Mobility Transistors) with recessed ohmic and recessed gate electrodes on silicon substrates for the first time. By optimizing ohmic recess depth, the lowest contact resistance of 0.7Ωmm was realized at optimized recess depth. Gate recess depth was also optimized and the maximum extrinsic trans-conductance gm-max of as high as 400mS/mm was obtained from the HEMT having gate length of 1μm. And HEMTs with gate length 0.2μm fabricated by electron beam lithography exhibited the maximum unity current cut-off frequency f_T of 56GHz and the maximum oscillation frequency f_ |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaN / HEMT / Si substrate / recessed ohmic electrode / recessed gate electrode |
| Paper # | ED2005-204,MW2005-158 |
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| Conference Information | |
| Committee | MW |
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| Conference Date | 2006/1/12(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
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| Assistant | |
| Paper Information | |
| Registration To | Microwaves (MW) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | AlGaN/GaN-HEMTs with Recessed Ohmic Electrodes on Si Substrates |
| Sub Title (in English) | |
| Keyword(1) | GaN |
| Keyword(2) | HEMT |
| Keyword(3) | Si substrate |
| Keyword(4) | recessed ohmic electrode |
| Keyword(5) | recessed gate electrode |
| 1st Author's Name | Juro MITA |
| 1st Author's Affiliation | Research & Development Group, Oki Electric Industry Co., Ltd.() |
| 2nd Author's Name | Katsuaki KAIFU |
| 2nd Author's Affiliation | Research & Development Group, Oki Electric Industry Co., Ltd. |
| 3rd Author's Name | Masanori ITO |
| 3rd Author's Affiliation | Research & Development Group, Oki Electric Industry Co., Ltd. |
| 4th Author's Name | Yoshiaki SANO |
| 4th Author's Affiliation | Research & Development Group, Oki Electric Industry Co., Ltd. |
| 5th Author's Name | Hiroyasu ISHIKAWA |
| 5th Author's Affiliation | Research Center for Nano-Device and System, Nagoya Institute of Technology |
| 6th Author's Name | Takashi EGAWA |
| 6th Author's Affiliation | Research Center for Nano-Device and System, Nagoya Institute of Technology |
| Date | 2006-01-19 |
| Paper # | ED2005-204,MW2005-158 |
| Volume (vol) | vol.105 |
| Number (no) | 524 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |