| Presentation | 2006-01-19 AlGaN/GaN HFETs with a Low-Temperature GaN Cap Layer Tadayoshi DEGUCHI, Eiji WAKI, Satoru ONO, Meiichi YAMASHITA, Atsushi KAMADA, Atsushi NAKAGAWA, Hiroyasu ISHIKAWA, Takashi EGAWA, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | AlGaN/GaN heterostructure field-effect transistors (HFETs) with a highly resistive, low-temperature GaN (LT-GaN) cap layer (LT-GaN/AlGaN/GaN HFETs) reduce gate leakage current and suppress current collapse because the cap layer serves as a gate insulator and passivates the surface of the HFET. LT-GaN/AlGaN/GaN HFETs exhibit lower ohmic contact resistance compared with conventional AlGaN/GaN HFETs. We investigated the mechanism by which the LT-cap layer reduces ohmic contact resistance by using TEM analysis. We found that the reduced ohmic contact resistance is dominated by the electrode materials diffusing into the GaN channel layer. The current collapse was suppressed in the LT-GaN/AlGaN/GaN HFETs even under pulse-mode gate stress with short pulses of 200ns. The f_T and f_ |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | AlGaN/GaN / HFET / LT-GaN / ohmic contact resistance / TEM / current collapse |
| Paper # | ED2005-203,MW2005-157 |
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| Committee | MW |
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| Conference Date | 2006/1/12(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Registration To | Microwaves (MW) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | AlGaN/GaN HFETs with a Low-Temperature GaN Cap Layer |
| Sub Title (in English) | |
| Keyword(1) | AlGaN/GaN |
| Keyword(2) | HFET |
| Keyword(3) | LT-GaN |
| Keyword(4) | ohmic contact resistance |
| Keyword(5) | TEM |
| Keyword(6) | current collapse |
| 1st Author's Name | Tadayoshi DEGUCHI |
| 1st Author's Affiliation | Research Laboratory, New Japan Radio Co., Ltd.() |
| 2nd Author's Name | Eiji WAKI |
| 2nd Author's Affiliation | Research Laboratory, New Japan Radio Co., Ltd. |
| 3rd Author's Name | Satoru ONO |
| 3rd Author's Affiliation | Research Laboratory, New Japan Radio Co., Ltd. |
| 4th Author's Name | Meiichi YAMASHITA |
| 4th Author's Affiliation | Research Laboratory, New Japan Radio Co., Ltd. |
| 5th Author's Name | Atsushi KAMADA |
| 5th Author's Affiliation | Research Laboratory, New Japan Radio Co., Ltd. |
| 6th Author's Name | Atsushi NAKAGAWA |
| 6th Author's Affiliation | Research Laboratory, New Japan Radio Co., Ltd. |
| 7th Author's Name | Hiroyasu ISHIKAWA |
| 7th Author's Affiliation | Research Center for Nano-Device and System, Nagoya Institute of Technology |
| 8th Author's Name | Takashi EGAWA |
| 8th Author's Affiliation | Research Center for Nano-Device and System, Nagoya Institute of Technology |
| Date | 2006-01-19 |
| Paper # | ED2005-203,MW2005-157 |
| Volume (vol) | vol.105 |
| Number (no) | 524 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |