| Presentation | 2006-01-19 C-V characterization of GaN based MIS structures at high temperatures Hiroki Kato, Marcin Miczek, Tamotsu Hashizume, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | To investigate interface properties of GaN-based MIS structures, capacitance-voltage (CV) characterization was carried out under high temperatures and UV illumination. A SiO_2/GaN structure showed a pronounced decrease in slope of capacitance variation and an increase in capacitance at the depletion region at high temperatures as well as a large hysteresis in the CV curve under UV illumination. These are probably caused by a response of interface states near midgap. Then we fabricated a SiO_2/ultrathin AlO_x/GaN structure. An ultrathin AlO_x layer was prepared on GaN surface by molecular beam deposition of Al and UHV annealing. The MIS structure with an ultrathin AlO_x interlayer gave a good CV curve close to the calculated one. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaN / MIS / CV / high temperature / UV / SiO_2 / Al_2O_3 |
| Paper # | ED2005-201,MW2005-155 |
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| Conference Information | |
| Committee | MW |
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| Conference Date | 2006/1/12(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Microwaves (MW) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | C-V characterization of GaN based MIS structures at high temperatures |
| Sub Title (in English) | |
| Keyword(1) | GaN |
| Keyword(2) | MIS |
| Keyword(3) | CV |
| Keyword(4) | high temperature |
| Keyword(5) | UV |
| Keyword(6) | SiO_2 |
| Keyword(7) | Al_2O_3 |
| 1st Author's Name | Hiroki Kato |
| 1st Author's Affiliation | Research Center for Quantum Electronics, Hokkaido University() |
| 2nd Author's Name | Marcin Miczek |
| 2nd Author's Affiliation | Research Center for Quantum Electronics, Hokkaido University |
| 3rd Author's Name | Tamotsu Hashizume |
| 3rd Author's Affiliation | Research Center for Quantum Electronics, Hokkaido University |
| Date | 2006-01-19 |
| Paper # | ED2005-201,MW2005-155 |
| Volume (vol) | vol.105 |
| Number (no) | 524 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |