| Presentation | 2006-01-19 Analysis of Gate-Lag Phenomena in Unpassivated AlGaN/GaN HEMTs Alberto F. BASILE, Junji KOTANI, Tamotsu HASHIZUME, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Gate-lag effects are characterized in AlGaN/GaN high electron mobility transistors (HEMTs) by means of measurements at various temperatures and under UV light irradiation. Gate lag increasingly affects device switching at increasing extension of the surface access region, suggesting that responsible deep levels be located at the free surface of the HEMT. Results are presented from isothermal current transient spectroscopy (ICTS) analysis, providing consistent indications about activation energy of deep-level traps. Gate-lag transients are shown to be suppressed by UV illumination. The persistence of dispersion-free transients, after stopping UV light, may be attributed to oxygen desorption. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | AlGaN/GaN HEMTs / current collapse / gate lag / surface traps / ICTS / UV illumination |
| Paper # | ED2005-200,MW2005-154 |
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| Conference Information | |
| Committee | MW |
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| Conference Date | 2006/1/12(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
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| Paper Information | |
| Registration To | Microwaves (MW) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Analysis of Gate-Lag Phenomena in Unpassivated AlGaN/GaN HEMTs |
| Sub Title (in English) | |
| Keyword(1) | AlGaN/GaN HEMTs |
| Keyword(2) | current collapse |
| Keyword(3) | gate lag |
| Keyword(4) | surface traps |
| Keyword(5) | ICTS |
| Keyword(6) | UV illumination |
| 1st Author's Name | Alberto F. BASILE |
| 1st Author's Affiliation | Graduate School of Information Science and Technology and Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University() |
| 2nd Author's Name | Junji KOTANI |
| 2nd Author's Affiliation | Graduate School of Information Science and Technology and Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University |
| 3rd Author's Name | Tamotsu HASHIZUME |
| 3rd Author's Affiliation | Graduate School of Information Science and Technology and Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University |
| Date | 2006-01-19 |
| Paper # | ED2005-200,MW2005-154 |
| Volume (vol) | vol.105 |
| Number (no) | 524 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |