| Presentation | 2006-01-26 Room-temperature operation of an exclusive-OR circuit using a highly doped Si single-electron transistor Kensaku Ohkura, Tetsuya Kitade, Anri Nakajima, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Single-electron transistors (SETs) utilizing the Coulomb blockade effect are promising candidates for use as basic elements of future low-power, high density integrated circuits. The use of Si for their construction is important because of Si's compatibility with conventional fabrication techniques for large-scale integrated devices. However, it seems difficult to fabricate SETs that can be operated at room temperature reproducibly by using currently available fabrication techniques. One way to overcome the difficulty is to utilize serially connected islands instead of a single island. Highly-doped SETs have the advantage of being easy to fabricate. A peak-to-valley current ratio (PVCR) for the Coulomb oscillation of up to 77 was observed at room temperature. This large PVCR is advantageous for circuit operations. We applied the Coulomb oscillation and multiple-gate input characteristics of only one SET to obtain an exclusive-OR operation at room temperature. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Single-electron transistor / SET / Si / Coulomb oscillation / PVCR / XOR circuit |
| Paper # | ED2005-227,SDM2005-239 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2006/1/19(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Room-temperature operation of an exclusive-OR circuit using a highly doped Si single-electron transistor |
| Sub Title (in English) | |
| Keyword(1) | Single-electron transistor |
| Keyword(2) | SET |
| Keyword(3) | Si |
| Keyword(4) | Coulomb oscillation |
| Keyword(5) | PVCR |
| Keyword(6) | XOR circuit |
| 1st Author's Name | Kensaku Ohkura |
| 1st Author's Affiliation | Research Center for Nanodevices and Systems, Hiroshima University() |
| 2nd Author's Name | Tetsuya Kitade |
| 2nd Author's Affiliation | ROHM CO., LTD. |
| 3rd Author's Name | Anri Nakajima |
| 3rd Author's Affiliation | Research Center for Nanodevices and Systems, Hiroshima University |
| Date | 2006-01-26 |
| Paper # | ED2005-227,SDM2005-239 |
| Volume (vol) | vol.105 |
| Number (no) | 549 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |