| Presentation | 2006-01-26 Periodic Coulomb oscillations in Si single-electron transistor based on multiple islands Kensaku Ohkura, Tetsuya Kitade, Anri Nakajima, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Single-electron transistors (SETs) utilizing the Coulomb blockade effect are promising candidates for use as basic elements of future low-power integrated circuits. The use of Si for their construction is important because of Si's compatibility with conventional fabrication techniques for large-scale integrated devices. However, it seems difficult to fabricate SETs that can be operated at room temperature reproducibly by using currently available fabrication techniques. One way to overcome the difficulty is to utilize serially connected islands instead of a single island. We fabricated highly doped Si SETs with a series of geometrically defined islands and measured those electric characteristics. Despite their island size variation, some of SETs showed clear periodic and quasiperiodic Coulomb oscillations. This is in contrast to the conventional idea that only geometrically uniform islands show periodic Coulomb oscillations. In this study, focusing on the obtained periodic Coulomb oscillations, we investigated the reason of the periodic characteristics, and presented the physical picture of conduction mechanism. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Single-electron transistor / SET / Si / Coulomb oscillation / Coulomb blockade |
| Paper # | ED2005-225,SDM2005-237 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2006/1/19(1days) |
| Place (in Japanese) | (See Japanese page) |
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| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Periodic Coulomb oscillations in Si single-electron transistor based on multiple islands |
| Sub Title (in English) | |
| Keyword(1) | Single-electron transistor |
| Keyword(2) | SET |
| Keyword(3) | Si |
| Keyword(4) | Coulomb oscillation |
| Keyword(5) | Coulomb blockade |
| 1st Author's Name | Kensaku Ohkura |
| 1st Author's Affiliation | Research Center for Nanodevices and Systems, Hiroshima University() |
| 2nd Author's Name | Tetsuya Kitade |
| 2nd Author's Affiliation | ROHM CO., LTD. |
| 3rd Author's Name | Anri Nakajima |
| 3rd Author's Affiliation | Research Center for Nanodevices and Systems, Hiroshima University |
| Date | 2006-01-26 |
| Paper # | ED2005-225,SDM2005-237 |
| Volume (vol) | vol.105 |
| Number (no) | 549 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |