| Presentation | 2006-01-26 Silicon Nanodevices Based on SOI Structures Embedding an Artificial Dislocation Network Yasuhiko ISHIKAWA, Chihiro YAMAMOTO, Michiharu TABE, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Si single-electron devices using an artificial dislocation network are reported. A two-dimensional network of screw dislocations embedded in an SOI layer is successfully formed at the directly bonded interface between two commercially available SOI wafers. Formation of a periodic potential is expected in the SOI layer due to the change in the band edge energies induced by the strain field around the dislocations. In fact, metal-oxide-semiconductor field-effect transistors, embedding a dislocation network with the period of 20nm, show oscillatory drain current-gate voltage characteristics due to the single-electron tunneling. The result indicates that the dislocation network is effective to form the periodic potential in the SOI layer, which works as the multiple tunnel junctions. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | SOI / Artificial Dislocation Network / Direct Wafer Bonding / Single-Electron Tunneling / Periodic Potential / Multiple Tunnel Junctions |
| Paper # | ED2005-224,SDM2005-236 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2006/1/19(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Silicon Nanodevices Based on SOI Structures Embedding an Artificial Dislocation Network |
| Sub Title (in English) | |
| Keyword(1) | SOI |
| Keyword(2) | Artificial Dislocation Network |
| Keyword(3) | Direct Wafer Bonding |
| Keyword(4) | Single-Electron Tunneling |
| Keyword(5) | Periodic Potential |
| Keyword(6) | Multiple Tunnel Junctions |
| 1st Author's Name | Yasuhiko ISHIKAWA |
| 1st Author's Affiliation | Research Institute of Electronics, Shizuoka University() |
| 2nd Author's Name | Chihiro YAMAMOTO |
| 2nd Author's Affiliation | Research Institute of Electronics, Shizuoka University |
| 3rd Author's Name | Michiharu TABE |
| 3rd Author's Affiliation | Research Institute of Electronics, Shizuoka University |
| Date | 2006-01-26 |
| Paper # | ED2005-224,SDM2005-236 |
| Volume (vol) | vol.105 |
| Number (no) | 549 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |