| Presentation | 2006-01-19 High Power AlGaN/GaN MIS-HEMT Masahito KANAMURA, Toshihide KIKKAWA, Taisuke IWAI, Kenji IMANISHI, Tokuro KUBO, Kazukiyo JOSHIN, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | A state-of-the-art large gate-periphery n-GaN/n-AlGaN/GaN MIS-HEMTs were fabricated on a S.I.-SiC substrate. The forward gate leakage current of the GaN MIS-HEMT was eighth orders of magnitude lower than that of the Schottky gate HEMT and the 2-terminal gate to drain reverse breakdown voltage of the GaN MIS-HEMT reaches greater than 400V. The single chip GaN MIS-HEMT amplifier operated at 60V achieves a high output power of 110W at 2.14GHz. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | AlGaN/GaN HEMT / Base Station / MIS / Si_3N_4 |
| Paper # | ED2005-208,MW2005-162 |
| Date of Issue |
| Conference Information | |
| Committee | ED |
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| Conference Date | 2006/1/12(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | High Power AlGaN/GaN MIS-HEMT |
| Sub Title (in English) | |
| Keyword(1) | AlGaN/GaN HEMT |
| Keyword(2) | Base Station |
| Keyword(3) | MIS |
| Keyword(4) | Si_3N_4 |
| 1st Author's Name | Masahito KANAMURA |
| 1st Author's Affiliation | Fujitsu Laboratories Ltd.() |
| 2nd Author's Name | Toshihide KIKKAWA |
| 2nd Author's Affiliation | Fujitsu Laboratories Ltd. |
| 3rd Author's Name | Taisuke IWAI |
| 3rd Author's Affiliation | Fujitsu Laboratories Ltd. |
| 4th Author's Name | Kenji IMANISHI |
| 4th Author's Affiliation | Fujitsu Laboratories Ltd. |
| 5th Author's Name | Tokuro KUBO |
| 5th Author's Affiliation | Fujitsu Laboratories Ltd. |
| 6th Author's Name | Kazukiyo JOSHIN |
| 6th Author's Affiliation | Fujitsu Laboratories Ltd. |
| Date | 2006-01-19 |
| Paper # | ED2005-208,MW2005-162 |
| Volume (vol) | vol.105 |
| Number (no) | 521 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |