| Presentation | 2006-01-19 Normally-off Operation of AlGaN/GaN Heterojunction Field Effect Transistors on Non-polar (11-20) plane Masayuki KURODA, Hidetoshi ISHIDA, Tetsuzo UEDA, Tsuyoshi TANAKA, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | GaN-based material is attractive for future power devices with high breakdown voltage and low on-state resistance because of its high breakdown field and saturation electron velocity. However. demonstration of the normally-off operation which is indispensable for power switching devices has been very difficult in the conventional AlGaN/GaN HFETs (Heterojunction Field Effect Transistors) on c-plane faces due to the extraordinary high inherent charges caused by spontaneous and piezoelectric polarization electric field. In this paper. we report on epitaxial growth and fabricating AlGaN/GaN HFETs on a-plane face that is not affected by the polarization field. The a-plane epitaxial layers are successfully grown by MOCVD (Metal Organic Chemical Vapor Deposition) on R-plane sapphire substrates. The a-plane devices exhibit nearly normally off characteristics in which the threshold voltage is -0.5V. while that of the c-plane device is -4.0V. This is the first demonstration of working a-plane GaN-based FET. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | AlGaN/GaN HFET / nonpolar / normally-off / power device |
| Paper # | ED2005-205,MW2005-159 |
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| Committee | ED |
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| Conference Date | 2006/1/12(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Normally-off Operation of AlGaN/GaN Heterojunction Field Effect Transistors on Non-polar (11-20) plane |
| Sub Title (in English) | |
| Keyword(1) | AlGaN/GaN HFET |
| Keyword(2) | nonpolar |
| Keyword(3) | normally-off |
| Keyword(4) | power device |
| 1st Author's Name | Masayuki KURODA |
| 1st Author's Affiliation | Semiconductor Device Research Center, Matsushita Electric Industrial Co., Ltd.() |
| 2nd Author's Name | Hidetoshi ISHIDA |
| 2nd Author's Affiliation | Semiconductor Device Research Center, Matsushita Electric Industrial Co., Ltd. |
| 3rd Author's Name | Tetsuzo UEDA |
| 3rd Author's Affiliation | Semiconductor Device Research Center, Matsushita Electric Industrial Co., Ltd. |
| 4th Author's Name | Tsuyoshi TANAKA |
| 4th Author's Affiliation | Semiconductor Device Research Center, Matsushita Electric Industrial Co., Ltd. |
| Date | 2006-01-19 |
| Paper # | ED2005-205,MW2005-159 |
| Volume (vol) | vol.105 |
| Number (no) | 521 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |