Presentation 2006-01-18
Effects of surface recombination on dc characteristics of InGaP/GaAs heterojunction bipolar transistors
Airi KUROKAWA, Zhi JIN, Hiroshi ONO, Kazuo Uchida, Shinji NOZAKI, Hiroshi MORISAKI,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) InGaP/GaAs heterojunction bipolar transistors (HBT's) with various sizes of the emitter were fabricated only using the wet etching process, and the effects of surface passivation on the dc characteristics of the HBT's were studied. The passivation suppresses the surface recombination in the extrinsic base region and the emitter size effect. Although the sulfur passivation is effective, the InGaP ledge passivation is most effective to obtain a high current gain and low surface recombination current. The InGaP ledge passivation also improves the reliability of the HBT's after the current stress.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Heterojunction bipolar transistors(HBT's) / InGaP/GaAs / surface Recombination / Emitter size effect / stress test
Paper # ED2005-198,MW2005-152
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Committee ED
Conference Date 2006/1/11(1days)
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Registration To Electron Devices (ED)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Effects of surface recombination on dc characteristics of InGaP/GaAs heterojunction bipolar transistors
Sub Title (in English)
Keyword(1) Heterojunction bipolar transistors(HBT's)
Keyword(2) InGaP/GaAs
Keyword(3) surface Recombination
Keyword(4) Emitter size effect
Keyword(5) stress test
1st Author's Name Airi KUROKAWA
1st Author's Affiliation University of Electro-Communications()
2nd Author's Name Zhi JIN
2nd Author's Affiliation University of Electro-Communications
3rd Author's Name Hiroshi ONO
3rd Author's Affiliation University of Electro-Communications
4th Author's Name Kazuo Uchida
4th Author's Affiliation University of Electro-Communications
5th Author's Name Shinji NOZAKI
5th Author's Affiliation University of Electro-Communications
6th Author's Name Hiroshi MORISAKI
6th Author's Affiliation University of Electro-Communications
Date 2006-01-18
Paper # ED2005-198,MW2005-152
Volume (vol) vol.105
Number (no) 520
Page pp.pp.-
#Pages 6
Date of Issue