Presentation 2006/1/20
Organic Field Effect Transistor characteristics under applying DC bias stress
Daisuke KAWAKAMI, Yoshiaki MORINO, Yuhsuke YASUTAKE, Hideyuki NISHIZAWA, Yutaka MAJIMA,
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Abstract(in English) Stability of the threshold voltage is primary concern for the practical use of organic field effect transistors (OFETs). As OFETs characteristics often show hysteresis when gate or drain voltage are applied, we have measured the time dependence of the drain current of a pentacene FET under applying constant stress gate voltage and drain voltage. It should be noted that the threshold voltage shifted applying stress voltages. On the contrary, the mobility kept the constant value under the application of the stress voltages. Time dependent threshold voltage under applying stress is discussed by considering an exponential energy distribution of traps.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) OFETs / Threshold voltage / Time dependent current / pentacene
Paper # OME2005-107
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Committee OME
Conference Date 2006/1/20(1days)
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Registration To Organic Material Electronics (OME)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Organic Field Effect Transistor characteristics under applying DC bias stress
Sub Title (in English)
Keyword(1) OFETs
Keyword(2) Threshold voltage
Keyword(3) Time dependent current
Keyword(4) pentacene
1st Author's Name Daisuke KAWAKAMI
1st Author's Affiliation Department of Physical Electronics, Tokyo Institute of Technology()
2nd Author's Name Yoshiaki MORINO
2nd Author's Affiliation Department of Physical Electronics, Tokyo Institute of Technology
3rd Author's Name Yuhsuke YASUTAKE
3rd Author's Affiliation Department of Physical Electronics, Tokyo Institute of Technology
4th Author's Name Hideyuki NISHIZAWA
4th Author's Affiliation Department of Physical Electronics, Tokyo Institute of Technology
5th Author's Name Yutaka MAJIMA
5th Author's Affiliation Department of Physical Electronics, Tokyo Institute of Technology
Date 2006/1/20
Paper # OME2005-107
Volume (vol) vol.105
Number (no) 576
Page pp.pp.-
#Pages 5
Date of Issue