| Presentation | 2006/1/20 Improvement and Performance of Organic Field Effect Transistor Constructed with a Polymer Gate Dielectric layer Shizuyasu OCHIAI, Yonglong JIN, Goro SAWA, Yoshiyuki UCHIDA, Kenzo KOJIMA, Asao OHASHI, Teruyoshi MIZUTANI, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We have fabricated an organic field effect transistor constructed with an active layer of pentacene thin film evaporated by vacuum deposition, a polycarbonate (PC) thin film fabricated by spin-coating adopted to a gate dielectric layer and a polyethylenenaphthalate thin film, using the substrate of an organic field effect transistor. The surface morphologies and orientations of PC and pentacene thin films were observed analyzed by atomic force microscopy (AFM) and XRD diffractometer. It was confirmed that the surface morphology of PC thin film had smoothness of molecular level. It was also confirmed that the crystal in pentacene thin film grew with dendrites from the AFM image of the surface morphology of pentacene thin film. The organic field effect transistor was performed by drain current vs. drain voltage measured with changing gate voltage. Based on the performance of the organic field effect transistor, the carrier mobility was 0.7×10^<-3> am^2/Vs, the on/off ratio was 10^2 and the sub threshold voltage was 32 V. To investigate the effect of OFET exposed in O_2 (doped with O_2), the performance of OFET exposed to the atmosphere for two months after as-prepared OFET was estimated from I_D-V_D characteristics. The carrier mobility was 3.1×10^<-3> am^2/Vs, the on/off ratio was 140 and the sub threshold voltage was 18 V. It was confirmed that from this result that the performance of OFET improved markedly exposed to the atmosphere for two months when compared to as-prepared OFET. This indicates that by exposing it to the atmosphere for two months after as-prepared OFET, when oxygen molecules of high electron affinity are doped in OFET, many holes in OFET originate from the high electron affinity of the oxygen molecule. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | organic field effect transistor / polycarbonate / pentacene / mobility |
| Paper # | OME2005-106 |
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| Conference Information | |
| Committee | OME |
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| Conference Date | 2006/1/20(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Paper Information | |
| Registration To | Organic Material Electronics (OME) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Improvement and Performance of Organic Field Effect Transistor Constructed with a Polymer Gate Dielectric layer |
| Sub Title (in English) | |
| Keyword(1) | organic field effect transistor |
| Keyword(2) | polycarbonate |
| Keyword(3) | pentacene |
| Keyword(4) | mobility |
| 1st Author's Name | Shizuyasu OCHIAI |
| 1st Author's Affiliation | Dept. of Electrical Eng., Aichi Inst. of Tech.() |
| 2nd Author's Name | Yonglong JIN |
| 2nd Author's Affiliation | Dept. of Electrical Eng., Aichi Inst. of Tech. |
| 3rd Author's Name | Goro SAWA |
| 3rd Author's Affiliation | Dept. of Electrical Eng., Aichi Inst. of Tech. |
| 4th Author's Name | Yoshiyuki UCHIDA |
| 4th Author's Affiliation | Dept. of Electrical Eng., Aichi Inst. of Tech. |
| 5th Author's Name | Kenzo KOJIMA |
| 5th Author's Affiliation | Dept. of Electrical Eng., Aichi Inst. of Tech. |
| 6th Author's Name | Asao OHASHI |
| 6th Author's Affiliation | Dept. of Electrical Eng., Aichi Inst. of Tech. |
| 7th Author's Name | Teruyoshi MIZUTANI |
| 7th Author's Affiliation | Dept. of Electrical Eng., Aichi Inst. of Tech. |
| Date | 2006/1/20 |
| Paper # | OME2005-106 |
| Volume (vol) | vol.105 |
| Number (no) | 576 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |