Presentation 2002/6/24
Cu-Field Aided Lateral Crystallization (FALC) of Amorphous Silicon Films below 450℃
Kyoung-Wan Park, Jeong-Eun You, Duck-Kyun Choi,
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Abstract(in English) By adopting a novel concept of Cu-field aided lateral crystallization (FALC) process, possibility of the low temperature crystallization of amorphous silicon films was investigated. When an electric field was applied to the selectively Cu-deposited (a-Si) film during the thermal annealing below 450℃, the lateral crystallization proceeded toward Cu-free region from negative electrode side to positive electrode side. Microstructures of the crystallized area were investigated and we confirmed that 800Å thick a-Si film was completely crystallized by Cu-FALC process below 450℃. Furthermore, we could successfully crystallize the a-Si at the temperature as low as 350℃ with an extremely fast crystallization velocity of 12 μm/h by Cu-FALC process.
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Keyword(in English) Cu-field aided lateral crystallization (Cu-FALC) / Poly-Si / metal catalyst / crystallization mediator / low temperature crystallization
Paper # ED2002-155
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Committee ED
Conference Date 2002/6/24(1days)
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Language ENG
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Cu-Field Aided Lateral Crystallization (FALC) of Amorphous Silicon Films below 450℃
Sub Title (in English)
Keyword(1) Cu-field aided lateral crystallization (Cu-FALC)
Keyword(2) Poly-Si
Keyword(3) metal catalyst
Keyword(4) crystallization mediator
Keyword(5) low temperature crystallization
1st Author's Name Kyoung-Wan Park
1st Author's Affiliation Department of Ceramic Engineering, Hanyang University()
2nd Author's Name Jeong-Eun You
2nd Author's Affiliation Department of Ceramic Engineering, Hanyang University
3rd Author's Name Duck-Kyun Choi
3rd Author's Affiliation Department of Ceramic Engineering, Hanyang University
Date 2002/6/24
Paper # ED2002-155
Volume (vol) vol.102
Number (no) 175
Page pp.pp.-
#Pages 5
Date of Issue