| Presentation | 2002/6/24 Stress Relaxation in Recrystallized Polycrystalline Si Film Formed by Excimer Laser Annealing Nanya KAWAMOTO, Hisashi ABE, Naoto MATSUO, Ryouhei TAGUCHI, Tomoyuki NOUDA, Hiroki HAMADA, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We investigated the characteristics of the polycrystalline-Si (poly-Si) film fabricated by excimer laser annealing (ELA) on the SiO_2 substrate (SiO_2 (100nm) / glass), SiN substrate(SiO_2 (50nm) / SiN(50nm) / glass) and quartz substrate from a viewpoint of the stress relaxation. It is clarified by optical method for the first time that the internal stress of the recrystallized poly-Si strongly depends on the substrate film structure. The disk-shaped grains are generated in the poly-Si film on the quartz substrate, on the other hand, the secandary crystal grain growth occurs in the poly-Si on the SiO_2 substrate to relax the internal stress of it. These phenomena are discussed by taking into consideration of the relationship between the Raman peak shift or the full width of half maximum (FWHM) of TO phonon peak and the energy density or the shot number. The solid phase crystallization (SPC) model considering the hydrogen molecules is also inferred. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | excimer laser annealing (ELA) / poly-Si / stress relaxation / secandary grain growth / disk-shaped grain / hydrogen |
| Paper # | ED2002-154 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2002/6/24(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Stress Relaxation in Recrystallized Polycrystalline Si Film Formed by Excimer Laser Annealing |
| Sub Title (in English) | |
| Keyword(1) | excimer laser annealing (ELA) |
| Keyword(2) | poly-Si |
| Keyword(3) | stress relaxation |
| Keyword(4) | secandary grain growth |
| Keyword(5) | disk-shaped grain |
| Keyword(6) | hydrogen |
| 1st Author's Name | Nanya KAWAMOTO |
| 1st Author's Affiliation | Dept. Electric. & Electron. Eng., Yamaguchi Univ.() |
| 2nd Author's Name | Hisashi ABE |
| 2nd Author's Affiliation | Microelectronics Research Center, SANYO Electric Co., Ltd. |
| 3rd Author's Name | Naoto MATSUO |
| 3rd Author's Affiliation | Dept. Electric. & Electron. Eng., Yamaguchi Univ. |
| 4th Author's Name | Ryouhei TAGUCHI |
| 4th Author's Affiliation | Dept. Electric. & Electron. Eng., Yamaguchi Univ. |
| 5th Author's Name | Tomoyuki NOUDA |
| 5th Author's Affiliation | Microelectronics Research Center, SANYO Electric Co., Ltd. |
| 6th Author's Name | Hiroki HAMADA |
| 6th Author's Affiliation | Microelectronics Research Center, SANYO Electric Co., Ltd. |
| Date | 2002/6/24 |
| Paper # | ED2002-154 |
| Volume (vol) | vol.102 |
| Number (no) | 175 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |