Presentation 2002/6/24
The effect of interface trap charges on poly-Si TFT
Kook Chul Moon, Min-Chul Lee, Jae-Hoon Lee, Min-Koo Han,
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Abstract(in English) It is presented that the band mobility of polycrystalline silicon thin film transistor is mostly governed by the interface traps in case of the same grain size and that the mobility contains the parameter related with interface traps. Our proposed model includes parameters related with interface trap charges as well as grain boundary trap charges. The new method successfully explains that the large interface trap degrades the mobility. It is also possible to extract the interface trap charges from I-V transfer characteristics using our new model.
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Keyword(in English) poly-Si TFT / effective mobility / interface charge / modeling
Paper # ED2002-153
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Committee ED
Conference Date 2002/6/24(1days)
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Language ENG
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) The effect of interface trap charges on poly-Si TFT
Sub Title (in English)
Keyword(1) poly-Si TFT
Keyword(2) effective mobility
Keyword(3) interface charge
Keyword(4) modeling
1st Author's Name Kook Chul Moon
1st Author's Affiliation School of Electrical Engineering, Seoul National University()
2nd Author's Name Min-Chul Lee
2nd Author's Affiliation School of Electrical Engineering, Seoul National University
3rd Author's Name Jae-Hoon Lee
3rd Author's Affiliation School of Electrical Engineering, Seoul National University
4th Author's Name Min-Koo Han
4th Author's Affiliation School of Electrical Engineering, Seoul National University
Date 2002/6/24
Paper # ED2002-153
Volume (vol) vol.102
Number (no) 175
Page pp.pp.-
#Pages 4
Date of Issue