Presentation 2002/6/24
Novel Device Transfer Technology by Backside Etching (DTTBE) for High Performance Poly-Si TFTs on Plastic Substrate
Ching-Fa Yeh, Shuo-Cheng Wang, Chien-Kai Huang, Yuan-Tung Dai,
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Abstract(in English) A novel method that makes it possible to transfer thin-film devices from Si wafers to glass or plastic substrate has been investigated. First, high performance poly-Si TFTs were fabricated on the Si wafer and then adhered to glass or plastic substrates. The remaining Si was removed delicately using wafer backside CMP and wet chemical etching. The transferred devices exhibit no electrical degradation or yield loss. Therefore, for high-quality display application on low-melting temperature substrates, the novel transfer technique is quite attractive because of no process temperature limitation and the fully compatibility with conventional CMOS technology.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) thin-film transistor / glass substrate / plastic substrate / CMP / wet etching
Paper # ED2002-152
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Committee ED
Conference Date 2002/6/24(1days)
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Language ENG
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Novel Device Transfer Technology by Backside Etching (DTTBE) for High Performance Poly-Si TFTs on Plastic Substrate
Sub Title (in English)
Keyword(1) thin-film transistor
Keyword(2) glass substrate
Keyword(3) plastic substrate
Keyword(4) CMP
Keyword(5) wet etching
1st Author's Name Ching-Fa Yeh
1st Author's Affiliation Department of Electronics Engineering & Institute of Electronics, National Cbiao-Tung University()
2nd Author's Name Shuo-Cheng Wang
2nd Author's Affiliation Department of Electronics Engineering & Institute of Electronics, National Cbiao-Tung University
3rd Author's Name Chien-Kai Huang
3rd Author's Affiliation Department of Electronics Engineering & Institute of Electronics, National Cbiao-Tung University
4th Author's Name Yuan-Tung Dai
4th Author's Affiliation Electronics Research & Service Organization of Industrial Technology Research Institute
Date 2002/6/24
Paper # ED2002-152
Volume (vol) vol.102
Number (no) 175
Page pp.pp.-
#Pages 4
Date of Issue