Presentation	2002/6/24 Surface nitridation and etching of ULSI related materials using a Cat-CVD system Akira Izumi, Tsubasa Miki, Hideki Matsumura,
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Abstract(in English)	In this paper we reports surface nitridation and etching of ULSI related materials using NH_3 or H_2 decomposed species generated by heated tungsten catalyzer in a Cat-CVD system. The surface of SiO_2/Si(100) is nitrided at temperature as low as 200 ℃ using decomposed NH_3 species. SIMS measurements revealed that nitride layer is located at the top-surface of SiO_2. Heavy-doped, as high as 1x10^<16> cm^<-2>, ion-implanted photoresist removal is realized using atomic hydrogen.
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Keyword(in English)	surface nitridation / photoresist removal / Cat-CVD / atomic hydrogen
Paper #	ED2002-150
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Committee	ED
Conference Date	2002/6/24(1days)
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Registration To	Electron Devices (ED)
Language	ENG
Title (in Japanese)	(See Japanese page)
Sub Title (in Japanese)	(See Japanese page)
Title (in English)	Surface nitridation and etching of ULSI related materials using a Cat-CVD system
Sub Title (in English)
Keyword(1)	surface nitridation
Keyword(2)	photoresist removal
Keyword(3)	Cat-CVD
Keyword(4)	atomic hydrogen
1st Author's Name	Akira Izumi
1st Author's Affiliation	JAIST (Japan Advanced Institute of Science and Technology)()
2nd Author's Name	Tsubasa Miki
2nd Author's Affiliation	JAIST (Japan Advanced Institute of Science and Technology)
3rd Author's Name	Hideki Matsumura
3rd Author's Affiliation	JAIST (Japan Advanced Institute of Science and Technology)
Date	2002/6/24
Paper #	ED2002-150
Volume (vol)	vol.102
Number (no)	175
Page	pp.pp.-
#Pages	4
Date of Issue