| Presentation | 2002/6/24 Formation of Ultra-thin Silicon Dioxide Films at Low Temperatures using Remote Plasma Oxidation and Application for Gate Insulators Y.H. Sun, T. Iida, T. Kimoto, H. Matsunami, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | SiO_2 films have been formed directly on a silicon surface by remote plasma oxidation at low temperatures (500～680℃). We have investigated the electrical properties and Si/SiO_2 interface properties using a quasi-static C-V method. The breakdown electric field exceeded 10 MV/cm. The Si/SiO_2 interface state density and the fixed charge density could be reduced with increasing oxidation temperature. MOSFETs with plasma-oxidized SiO_2 exhibited an effective channel mobility of 350 cm^2/Vs. The interface properties were also characterized by using MOSFETs as gate controlled diodes. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | plasma oxidation / quasi-static C-V / MOSFET / gate-controlled diode |
| Paper # | ED2002-149 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2002/6/24(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Formation of Ultra-thin Silicon Dioxide Films at Low Temperatures using Remote Plasma Oxidation and Application for Gate Insulators |
| Sub Title (in English) | |
| Keyword(1) | plasma oxidation |
| Keyword(2) | quasi-static C-V |
| Keyword(3) | MOSFET |
| Keyword(4) | gate-controlled diode |
| 1st Author's Name | Y.H. Sun |
| 1st Author's Affiliation | Department of Electronic Science and Engineering, Kyoto University() |
| 2nd Author's Name | T. Iida |
| 2nd Author's Affiliation | Department of Electronic Science and Engineering, Kyoto University |
| 3rd Author's Name | T. Kimoto |
| 3rd Author's Affiliation | Department of Electronic Science and Engineering, Kyoto University |
| 4th Author's Name | H. Matsunami |
| 4th Author's Affiliation | Department of Electronic Science and Engineering, Kyoto University |
| Date | 2002/6/24 |
| Paper # | ED2002-149 |
| Volume (vol) | vol.102 |
| Number (no) | 175 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |