Presentation 2002/6/24
Effect of hydrogen annealing on electrical properties of Bi-layered perovskite thin films
Chun Keun Kim, Ik-Soo Kim, Hoon Sang Choi, Seong-Il Kim, Chang Woo Lee, Yong Tae Kim,
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Abstract(in English) It is well known that ferroelectric properties of Pt/SBT and Pt/SBN thin films are degraded due to the Pt catalytic reaction after H_2 annaealing. However, sometimes SBT and SBN film itself may be degraded after the H_2 annaealing. In this work, we have studied interface trap between SBT (or SBN) and Si, effects of bias stress on flat band voltage and asymmetric hystersis shift before and after H_2 annaealing at curie temperature and higher temperature than curie point. As an alternative top electrode, Ir and IrO_2 /SBT (or SBN)/Si structures have been investigated with H_2 annaealing. Also, we will discuss changes in electrical properties after the recovery process.
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Keyword(in English) hyrogen annealing / Bi-layered perovskite / interface trap / curie temperature
Paper # ED2002-148
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Committee ED
Conference Date 2002/6/24(1days)
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Language ENG
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Effect of hydrogen annealing on electrical properties of Bi-layered perovskite thin films
Sub Title (in English)
Keyword(1) hyrogen annealing
Keyword(2) Bi-layered perovskite
Keyword(3) interface trap
Keyword(4) curie temperature
1st Author's Name Chun Keun Kim
1st Author's Affiliation Semiconductor Lab.()
2nd Author's Name Ik-Soo Kim
2nd Author's Affiliation Semiconductor Lab.
3rd Author's Name Hoon Sang Choi
3rd Author's Affiliation Semiconductor Lab.
4th Author's Name Seong-Il Kim
4th Author's Affiliation Semiconductor Lab.
5th Author's Name Chang Woo Lee
5th Author's Affiliation Dept. of Physics, Kookmin Univ.
6th Author's Name Yong Tae Kim
6th Author's Affiliation Semiconductor Lab.
Date 2002/6/24
Paper # ED2002-148
Volume (vol) vol.102
Number (no) 175
Page pp.pp.-
#Pages 4
Date of Issue